TM V = 55V IXTH280N055T TrenchMV DSS I = 280A IXTQ280N055T Power MOSFET D25 R 3.2m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G V T = 25C to 175C55 V DSS J D (TAB) S V T = 25C to 175C, R = 1M 55 V DGR J GS V Transient 20 V GSM TO-3P (IXTQ) I T = 25C 280 A D25 C I Lead Current Limit, RMS 75 A LRMS I T = 25C, pulse width limited by T 600 A DM C JM I T = 25C40 A A C G D E T = 25C 1.5 J AS C S (TAB) P T = 25C 550 W D C T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg G = Gate D = Drain S = Source TAB = Drain T 1.6mm (0.062in.) from case for 10s 300 C L Plastic body for 10 seconds 260 C Features M Mounting torque (TO-247)(TO-3P) 1.13 / 10 Nm/lb.in. d International standard packages Weight TO-247 6.0 g 175C Operating Temperature TO-3P 5.5 g Avalanche Rated Low R DS(on) Advantages Symbol Test Conditions Characteristic Values Easy to mount (T = 25C unless otherwise specified) Min. Typ. Max. J Space savings High power density BV V = 0V, I = 250A 55 V DSS GS D V V = V , I = 250A 2.0 4.0 V Applications GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS Automotive I V = V 5 A - Motor Drives DSS DS DSS - High Side Switch V = 0V T = 150C 250 A GS J - 12V Battery R V = 10V, I = 50A, Notes 1, 2 2.6 3.2 m DS(on) GS D - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications 2008 IXYS CORPORATION, All rights reserved DS99630A(07/08)IXTH280N055T IXTQ280N055T Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 60 107 S fs DS D C 9700 pF iss P C V = 0V, V = 25V, f = 1MHz 1540 pF 1 2 3 oss GS DS C 265 pF rss t 32 ns d(on) Resistive Switching Times t 55 ns r V = 10V, V = 0.5 V , I = 50A GS DS DSS D t 49 ns d(off) e R = 3.3 (External) G t 37 ns Terminals: 1 - Gate 2 - Drain f Q 200 nC Dim. Millimeter Inches g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 25A 50 nC gs GS DS DSS D A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q 53 nC 1 gd A 2.2 2.6 .059 .098 2 R 0.27 C/W b 1.0 1.4 .040 .055 thJC b 1.65 2.13 .065 .084 1 R (TO-247)(TO-3P) 0.25 C/W b 2.87 3.12 .113 .123 thCH 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C, unless otherwise specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 280 A S GS R 4.32 5.49 .170 .216 I Repetitive, Pulse width limited by T 600 A SM JM V I = 50A, V = 0V, Note 1 1.0 V F GS SD TO-3P (IXTQ) Outline t I = 140A, V 54 ns = 0V rr F GS -di/dt = 100A/s, V = 25V R Notes: 1. Pulse test, t 300s duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537