TM IXTA2R4N120P V = 1200V Polar DSS IXTP2R4N120P I = 2.4A D25 Power MOSFET IXTH2R4N120P R 7.5 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 1200 V DSS J TO-220 (IXTP) V T = 25 C to 150 C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G I T = 25 C 2.4 A D25 C D S I T = 25 C, Pulse Width Limited by T 6.0 A D (Tab) DM C JM TO-247 (IXTH) I T = 25 C 2.4 A A C E T = 25 C 200 mJ AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G P T = 25 C 125 W D C D D (Tab) S T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C Features SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C International Standard Packages M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d Low Q G Weight TO-263 2.5 g Avalanche Rated TO-220 3.0 g Low Package Inductance TO-247 6.0 g Fast Intrinsic Rectifier Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 1200 V DSS GS D Applications V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 5 A DSS DS DSS GS AC and DC Motor Drives T = 125C 300 A Discharge Circiuts in Lasers, Spark J Igniters, RF Generators R V = 10V, I = 0.5 I , Note 1 6.5 7.5 DS(on) GS D D25 High Voltage Pulse Power Applications 2018 IXYS CORPORATION, All rights reserved DS99873B(6/18)IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 1.2 2.0 S fs DS D D25 C 1207 pF iss C V = 0V, V = 25V, f = 1MHz 57 pF oss GS DS C 11 pF rss t 22 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 70 ns d(off) R = 18 (External) G t 32 ns f Q 37 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 6 nC gs GS DS DSS D D25 Q 20 nC gd R 1.0 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 2.4 A S GS I Repetitive, pulse Width Limited by T 7.2 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 2.4A, -di/dt = 100A/ s t 920 ns F rr V = 100V R Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537