Preliminary Technical Information TM V = 40V TrenchT2 Power IXTH300N04T2 DSS I = 300A MOSFET D25 R 2.5m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C40 V DSS J G V T = 25C to 175C, R = 1M 40 V DGR J GS (TAB) D S V Transient 20 V GSM I T = 25C 300 A D25 C G = Gate D = Drain I Lead Current Limit, RMS 160 A LRMS S = Source TAB = Drain I T = 25C, pulse width limited by T 900 A DM C JM I T = 25C 100 A A C Features E T = 25C 600 mJ AS C z P T = 25C 480 W International standard package D C z 175C Operating Temperature T -55 ... +175 C J z High current handling capability T 175 C JM z Avalanche Rated T -55 ... +175 C z stg Low R DS(on) T 1.6mm (0.062in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C sold Advantages M Mounting torque 1.13 / 10 Nm/lb.in. d z Easy to mount Weight 6 g z Space savings z High power density Applications Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) Min. Typ. Max. Synchronous Buck Converters J High Current Switching Power BV V = 0V, I = 250A 40 V DSS GS D Supplies V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D Battery Powered Electric Motors I V = 20V, V = 0V 200 nA Resonant-mode power supplies GSS GS DS Electronics Ballast Application I V = V 5 A DSS DS DSS Class D Audio Amplifiers V = 0V T = 150C 150 A GS J R V = 10V, I = 50A, Notes 1, 2 2.5 m DS(on) GS D 2008 IXYS CORPORATION, All rights reserved DS100079(11/08)IXTH300N04T2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 55 94 S fs DS D C 10.7 nF iss P C V = 0V, V = 25V, f = 1MHz 1630 pF 1 2 3 oss GS DS C 263 pF rss t 22 ns d(on) Resistive Switching Times t 17 ns r V = 10V, V = 0.5 V , I = 100A GS DS DSS D t 32 ns d(off) e R = 2 (External) G t 13 ns Terminals: 1 - Gate 2 - Drain f Q 145 nC Dim. Millimeter Inches g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 0.5 I 44 nC gs GS DS DSS D D25 A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q 36 nC 1 gd A 2.2 2.6 .059 .098 2 R 0.31 C/W b 1.0 1.4 .040 .055 thJC b 1.65 2.13 .065 .084 1 R 0.21 C/W b 2.87 3.12 .113 .123 thCH 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C, unless otherwise specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 300 A S GS R 4.32 5.49 .170 .216 I Repetitive, Pulse width limited by T 1000 A SM JM V I = 100A, V = 0V, Note 1 1.3 V F GS SD t 53 ns I = 150A, V = 0V rr F GS I -di/dt = 100A/s 1.8 A RM V = 20V R Q 47.7 nC RM Note 1: Pulse test, t 300s duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537