High Voltage V = 1500V IXTH3N150 DSS I =3A Power MOSFET D25 R 7.3 DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1500 V DSS J V T = 25 C to 150 C, R = 1M 1500 V DGR J GS G D Tab V Continuous 30 V S GSS V Transient 40 V GSM G = Gate D = Drain I T = 25 C3A D25 C S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 9A DM C JM I T = 25 C3A A C E T = 25 C 250 mJ AS C Features dv/dt I I , V V ,T 150 C 5 V/ns S DM DD DSS J P T = 25 C 250 W International Standard Package D C Fast Intrinsic Diode T - 55 ... +150 C J Avalanche Rated T 150 C JM Molding Epoxies meet UL 94 V-0 T - 55 ... +150 C stg Flammability Classification T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Advantages M Mounting Torque 1.13 / 10 Nm/lb.in. d Easy to Mount Weight 6 g Space Savings High Power Density Applications Symbol Test Conditions Characteristic Values High Voltage Power Supplies (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Capacitor Discharge Applications BV V = 0V, I = 250 A 1500 V Pulse Circuits DSS GS D V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 10 A DSS DS DSS GS T = 125C 100A J R V = 10V, I = 0.5 I , Note 1 7.3 DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100286C(10/13)IXTH3N150 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 2.2 3.6 S fs DS D D25 C 1375 pF iss C V = 0V, V = 25V, f = 1MHz 90 pF oss GS DS C 30 pF rss R Gate Input Resistance 3.0 GI t 19 ns Resistive Switching Times d(on) t 21 ns 1 - Gate r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 2,4 - Drain t 42 ns 3 - Source d(off) R = 5 (External) G t 25 ns f Q 38.6 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 6.5 nC gs GS DS DSS D D25 Q 19.0 nC gd R 0.50 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 3 A S GS I Repetitive, Pulse Width Limited by T 12 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS t 0.9 s rr I = 1.5A, -di/dt = 100A/ s F Q 6.7 C RM V = 100V R I 15 A RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537