X-On Electronics has gained recognition as a prominent supplier of IXTH420N04T2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH420N04T2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTH420N04T2 IXYS

IXTH420N04T2 electronic component of IXYS
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Part No.IXTH420N04T2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET Trench T2 Power MOSFET
Datasheet: IXTH420N04T2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.9327 ea
Line Total: USD 9.93 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 9.9327
3 : USD 6.7575
7 : USD 6.3911

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the IXTH420N04T2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH420N04T2 and other electronic components in the MOSFETs category and beyond.

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.The IXTH420N04T2 is a Power MOSFET from IXYS Corporation. It is designed for use in power conversion and other applications such as load switching, level shifting, and DC to DC converters. The IXTH420N04T2 has a N-channel enhancement mode MOSFET design with trench technology and utilizes a T2 package. It has a maximum drain-source voltage of 200 volts and a maximum drain current of 8 amps. It features low gatecharge, low effective capacitance, and low RDS(on). The IXTH420N04T2 has a maximum power dissipation of 6.8 watts, a thermal resistance of 1.5 °C/W junction to case, and is RoHS compliant. This device is suitable for use in a variety of different applications and is ideal for low voltage, low power circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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