TM PolarP V = - 200V IXTT48P20P DSS Power MOSFETs I = - 48A IXTH48P20P D25 R 85m DS(on) P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C - 200 V DSS J V T = 25C to 150C, R = 1M - 200 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G D D (Tab) I T = 25C - 48 A S D25 C I T = 25C, Pulse Width Limited by T -144 A DM C JM G = Gate D = Drain I T = 25C - 48 A A C S = Source Tab = Drain E T = 25C 2.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 462 W D C T - 55 ... +150 C J Features T 150 C JM T - 55 ... +150 C stg z International Standard Packages T 1.6mm (0.062 in.) from Case for 10s 300 C z TM L Rugged PolarP Process T Plastic Body for 10s 260 C z SOLD Avalanche Rated z M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. Low Package Inductance d z Fast intrinsic Diode Weight TO-268 4 g TO-247 6 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = - 250A - 200 V z DSS GS D High-Side Switches z Push Pull Amplifiers V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z DC Choppers I V = 20V, V = 0V 100 nA z GSS GS DS Automatic Test Equipment z Current Regulators I V = V , V = 0V - 25 A DSS DS DSS GS T = 125C - 200 A J R V = -10V, I = 0.5 I , Note 1 85 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99981C(01/13) IXTT48P20P IXTH48P20P Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 19 32 S fs DS D D25 C 5400 pF iss C V = 0V, V = - 25V, f = 1MHz 1040 pF oss GS DS C 170 pF rss t 30 ns d(on) Resistive Switching Times t 46 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 67 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 3 (External) G 3 - Source t 27 ns f Q 103 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 40 nC gd R 0.27 C/W thJC R TO-247 0.21 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. TO-247 Outline SOA V = - 200V, I = -1.35A, T = 70C, Tp = 5s 270 W DS D C P 1 2 3 Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 48 A S GS e I Repetitive, Pulse Width Limited by T -192 A SM JM Terminals: 1 - Gate 2 - Drain 3 - Source V I = - 24A, V = 0V, Note 1 - 3.3 V SD F GS Dim. Millimeter Inches t 260 ns rr Min. Max. Min. Max. I = - 24A, -di/dt = -100A/s F Q 4.2 C RM A 4.7 5.3 .185 .209 V = -100V, V = 0V R GS I - 32.2 A A 2.2 2.54 .087 .102 1 RM A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Note 1. Pulse test, t 300s, duty cycle, d 2%. E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537