X-On Electronics has gained recognition as a prominent supplier of IXTH48P20P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTH48P20P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTH48P20P IXYS

IXTH48P20P electronic component of IXYS
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Part No.IXTH48P20P
Manufacturer: IXYS
Category: MOSFETs
Description: P-Channel 200 V 48A (Tc) 462W (Tc) Through Hole TO-247 (IXTH)
Datasheet: IXTH48P20P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 13.482 ea
Line Total: USD 13.48 
Availability - 230
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
230
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 13.482
2 : USD 10.57
5 : USD 9.982
510 : USD 9.66

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTH48P20P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTH48P20P and other electronic components in the MOSFETs category and beyond.

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TM PolarP V = - 200V IXTT48P20P DSS Power MOSFETs I = - 48A IXTH48P20P D25 R 85m DS(on) P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C - 200 V DSS J V T = 25C to 150C, R = 1M - 200 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G D D (Tab) I T = 25C - 48 A S D25 C I T = 25C, Pulse Width Limited by T -144 A DM C JM G = Gate D = Drain I T = 25C - 48 A A C S = Source Tab = Drain E T = 25C 2.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 462 W D C T - 55 ... +150 C J Features T 150 C JM T - 55 ... +150 C stg z International Standard Packages T 1.6mm (0.062 in.) from Case for 10s 300 C z TM L Rugged PolarP Process T Plastic Body for 10s 260 C z SOLD Avalanche Rated z M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. Low Package Inductance d z Fast intrinsic Diode Weight TO-268 4 g TO-247 6 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = - 250A - 200 V z DSS GS D High-Side Switches z Push Pull Amplifiers V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z DC Choppers I V = 20V, V = 0V 100 nA z GSS GS DS Automatic Test Equipment z Current Regulators I V = V , V = 0V - 25 A DSS DS DSS GS T = 125C - 200 A J R V = -10V, I = 0.5 I , Note 1 85 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99981C(01/13) IXTT48P20P IXTH48P20P Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 19 32 S fs DS D D25 C 5400 pF iss C V = 0V, V = - 25V, f = 1MHz 1040 pF oss GS DS C 170 pF rss t 30 ns d(on) Resistive Switching Times t 46 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 67 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 3 (External) G 3 - Source t 27 ns f Q 103 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 40 nC gd R 0.27 C/W thJC R TO-247 0.21 C/W thCS Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. TO-247 Outline SOA V = - 200V, I = -1.35A, T = 70C, Tp = 5s 270 W DS D C P 1 2 3 Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 48 A S GS e I Repetitive, Pulse Width Limited by T -192 A SM JM Terminals: 1 - Gate 2 - Drain 3 - Source V I = - 24A, V = 0V, Note 1 - 3.3 V SD F GS Dim. Millimeter Inches t 260 ns rr Min. Max. Min. Max. I = - 24A, -di/dt = -100A/s F Q 4.2 C RM A 4.7 5.3 .185 .209 V = -100V, V = 0V R GS I - 32.2 A A 2.2 2.54 .087 .102 1 RM A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Note 1. Pulse test, t 300s, duty cycle, d 2%. E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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