High Voltage V = 1500V IXTH4N150 DSS I = 4A Power MOSFET D25 R 6 DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1500 V DSS J V T = 25C to 150C, R = 1M 1500 V DGR J GS G D Tab V Continuous 30 V S GSS V Transient 40 V GSM G = Gate D = Drain I T = 25C4A D25 C S = Source Tab = Drain I T = 25C, Pulse Width Limited by T 12 A DM C JM I T = 25C4A A C E T = 25C 350 mJ AS C Features dv/dt I I , V V ,T 150C 5 V/ns S DM DD DSS J z International Standard Package P T = 25C 280 W D C z Fast Intrinsic Diode z T - 55 ... +150 C Avalanche Rated J z T 150 C Molding Epoxies meet UL 94 V-0 JM T - 55 ... +150 C Flammability Classification stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Advantages M Mounting Torque 1.13 / 10 Nm/lb.in. d z Easy to Mount Weight 6 g z Space Savings z High Power Density Applications Symbol Test Conditions Characteristic Values z High Voltage Power Supplies (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Capacitor Discharge Applications z Pulse Circuits BV V = 0V, I = 250A 1500 V DSS GS D V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 10 A DSS DS DSS GS T = 125C 100 A J R V = 10V, I = 0.5 I , Note 1 6 DS(on) GS D D25 2012 IXYS CORPORATION, All Rights Reserved DS100287B(10/12)IXTH4N150 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 2.8 4.6 S fs DS D D25 C 1576 pF iss P C V = 0V, V = 25V, f = 1MHz 105 pF 1 2 3 oss GS DS C 35 pF rss t 19 ns d(on) Resistive Switching Times t 23 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 42 ns d(off) R = 5 (External) e G t 22 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 44.5 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 7.7 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 21.7 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.45 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Source-Drain Diode E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 Symbol Test Conditions Characteristic Values L 19.81 20.32 .780 .800 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. L1 4.50 .177 J P 3.55 3.65 .140 .144 I V = 0V 4 A S GS Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I Repetitive, Pulse Width Limited by T 16 A SM JM S 6.15 BSC 242 BSC V I = I , V = 0V, Note 1 1.3 V SD F S GS t 0.9 s rr I = 0.5 I , -di/dt = 100A/s F D25 I 15.0 A RM V = 100V, V = 0V R GS Q 6.7 C RM Note: 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537