Standard Power MOSFET IXTH 50P085 V = -85 V DSS IXTT 50P085 I = -50 A D25 P-Channel Enhancement Mode R = 55 m Avalanche Rated DS(on) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C -85 V DSS J V T = 25C to 150C R = 1 M -85 V DGR J GS V Continuous 20 V GS D (TAB) V Transient 30 V GSM I T = 25C -50 A D25 C I T = 25C, pulse width limited by T -200 A DM C J I T = 25C -50 A TO-268 (IXTT) AR C E T = 25C30mJ AR C P T = 25C 300 W D C G T -55 ... +150 C J S D (TAB) T 150 C JM T -55 ... +150 C stg G = Gate, D = Drain, Maximum lead temperature for soldering 300 C S = Source, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s 250 C Features M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d International standard packages Weight TO-247 6 g TM Low R HDMOS process DS (on) TO-268 5 g Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Symbol Test Conditions Characteristic Values Low package inductance (<5 nH) (T = 25C, unless otherwise specified) J - easy to drive and to protect min. typ. max. V V = 0 V, I = -250 A -85 V DSS GS D Applications High side switching V V = V , I = -250 A -3.0 -5.0 V GS(th) DS GS D Push-pull amplifiers I V = 20 V , V = 0 100 nA GSS GS DC DS DC choppers I V = 0.8 V T =25C -25 A Automatic test equipment DSS DS DSS J V = 0 V T = 125C-1mA GS J R V = -10 V, I = 0.5 I 55 m DS(on) GS D D25 Advantages Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 2005 IXYS All rights reserved DS99140B(02/05)IXTH 50P085 IXTT 50P085 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = -10 V I = I , pulse test 8 16 S fs DS D D25 C 4200 pF 1 2 3 iss C V = 0 V, V = -25 V, f = 1 MHz 1720 pF oss GS DS C 750 pF rss t 46 ns d(on) t V = -10 V, V = 0.5 V , I = 0.5 I 39 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 4.7 (External) 86 ns d(off) G 3 - Source Tab - Drain t 38 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 150 nC g(on) A 4.7 5.3 .185 .209 Q V = -10 V, V = 0.5 V , I = 0.5 I 36 nC A 2.2 2.54 .087 .102 gs GS DS DSS D D25 1 A 2.2 2.6 .059 .098 2 Q 70 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 R 0.42 K/W b 2.87 3.12 .113 .123 thJC 2 C .4 .8 .016 .031 R (TO-247) 0.25 K/W thCS D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Source-Drain Diode Characteristic Values S 6.15 BSC 242 BSC (T = 25C, unless otherwise specified) J TO-268 (IXTT) Outline Symbol Test Conditions min. typ. max. I V = 0 -25 A S GS I Repetitive pulse width limited by T -200 A SM JM V I = I , V = 0 V, -3 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , di/dt = 100 A/s, V = -50 V 180 ns rr F S R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2