X-Class V = 650V IXTH52N65X DSS Power MOSFET I = 52A D25 R 68m DS(on) N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS G D Tab V Continuous 30 V GSS S V Transient 40 V GSM G = Gate D = Drain I T = 25 C52A D25 C S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 104 A DM C JM P T = 25 C 660 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Package M Mounting Torque 1.13/10 Nm/lb.in d Low R and Q DS(ON) G Low Package Inductance Weight 6 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 650 V DSS GS D Switch-Mode and Resonant-Mode Power Supplies V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D DC-DC Converters PFC Circuits I V = 30V, V = 0V 100 nA GSS GS DS AC and DC Motor Drives I V = V , V = 0V 10 A Robotics and Servo Controls DSS DS DSS GS T = 125C 100 A J R V = 10V, I = 0.5 I , Note 1 68 m DS(on) GS D D25 2015 IXYS CORPORATION, All Rights Reserved DS100604D(6/15) IXTH52N65X Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J D g V = 10V, I = 0.5 I , Note 1 25 42 S A fs DS D D25 A B E A2 R Gate Input Resistance 1.1 Q Gi S D2 R D1 C 4350 pF D iss P1 4 C V = 0V, V = 25V, f = 1MHz 3300 pF oss GS DS 1 2 3 L1 C 120 pF rss C E1 L Effective Output Capacitance C 204 pF o(er) Energy related V = 0V GS A1 b C 673 pF V = 0.8 V C b2 o(tr) Time related DS DSS 1 - Gate b4 e 2,4 - Drain 3 - Source t 26 ns d(on) Resistive Switching Times t 57 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 63 ns d(off) R = 2 (External) G t 16 ns f Q 113 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 25 nC gs GS DS DSS D D25 Q 57 nC gd R 0.19 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 52 A S GS I Repetitive, pulse Width Limited by T 208 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 435 ns rr I = 26A, -di/dt = 100A/ s F Q 9.8 C RM V = 100V R I 46 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537