X2-Class V = 650V IXTH62N65X2 DSS Power MOSFET I = 62A D25 R 50m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) V T = 25 C to 150 C 650 V DSS J G = Gate D = Drain V T = 25 C to 150 C, R = 1M 650 V DGR J GS S = Source Tab = Drain V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C62A D25 C I T = 25 C, Pulse Width Limited by T 124 A DM C JM I T = 25 C 10 A A C E T = 25 C2J AS C Features dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25 C 780 W D C International Standard Package Low R and Q T -55 ... +150 C DS(ON) G J Avalanche Rated T 150 C JM Low Package Inductance T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13 / 10 Nm/lb.in High Power Density d Easy to Mount Weight 6 g Space Savings Applications Symbol Test Conditions Characteristic Values Switch-Mode and Resonant-Mode (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV V = 0V, I = 1mA 650 V DC-DC Converters DSS GS D PFC Circuits V V = V , I = 250A 2.7 5.0 V GS(th) DS GS D AC and DC Motor Drives Robotics and Servo Controls I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 300 A J R V = 10V, I = 0.5 I , Note 1 50 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100679B(4/18) IXTH62N65X2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max D J A A B 0P O 0K M D B M+ E A2 A2 A2 A2 g V = 10V, I = 0.5 I , Note 1 25 56 S fs DS D D25 Q S D2 R + + R Gate Input Resistance 0.9 Gi D1 D 0P1 4 C 5800 pF iss 1 2 3 ixys option L1 C V = 0V, V = 25V, f = 1MHz 4260 pF oss GS DS C E1 C 2.3 pF L rss Effective Output Capacitance A1 b C 210 pF c b2 o(er) Energy related V = 0V b4 GS PINS: 1 - Gate e C 890 pF V = 0.8 V o(tr) Time related DS DSS O J M C A M+ 2, 4 - Drain 3 - Source t 28 ns d(on) Resistive Switching Times t 11 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 56 ns d(off) R = 2 (External) G t 5 ns f Q 100 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 28 nC gs GS DS DSS D D25 Q 35 nC gd R 0.16 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 62 A S GS I Repetitive, Pulse Width Limited by T 248 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 445 ns rr I = 31A, -di/dt = 100A/ s F Q 8.2 C RM V = 100V R I 36.7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537