Preliminary Technical Information TM TrenchP V = - 200V IXTT68P20T DSS Power MOSFETs I = - 68A IXTH68P20T D25 R 55m DS(on) P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C - 200 V DSS J V T = 25C to 150C, R = 1M - 200 V DGR J GS V Continuous 15 V GSS V Transient 25 V GSM G I T = 25C - 68 A D D25 C D (Tab) S I T = 25C, Pulse Width Limited by T - 200 A DM C JM I T = 25C - 68 A A C G = Gate D = Drain S = Source Tab = Drain E T = 25C 2.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 568 W Features D C T - 55 ... +150 C J z International Standard Packages T 150 C JM z Avalanche Rated T - 55 ... +150 C stg z Extended FBSOA z T 1.6mm (0.062 in.) from Case for 10s 300 C Fast Intrinsic Diode L T Plastic Body for 10s 260 C z SOLD Low R and Q DS(ON) G M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. d Weight TO-268 4 g Advantages TO-247 6 g z Easy to Mount z Space Savings z High Power Density Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z BV V = 0V, I = - 250A - 200 V High-Side Switching DSS GS D z Push Pull Amplifiers V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D z DC Choppers z Automatic Test Equipment I V = 15V, V = 0V 100 nA GSS GS DS z Current Regulators I V = V , V = 0V - 10 A z DSS DS DSS GS Battery Charger Applications T = 125C - 200 A J R V = -10V, I = 0.5 I , Note 1 55 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS100370A(01/13)IXTT68P20T IXTH68P20T Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 55 90 S fs DS D D25 C 33.4 nF iss C V = 0V, V = - 25V, f = 1MHz 1300 pF oss GS DS C 307 pF rss t 63 ns d(on) Resistive Switching Times t 29 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 115 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 1 (External) G 3 - Source t 18 ns f Q 380 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 125 nC gs GS DS DSS D D25 Q 70 nC gd R 0.22 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 68 A TO-247 Outline S GS I Repetitive, Pulse Width Limited by T - 270 A SM JM V I = I , V = 0V, Note 1 -1.4 V SD F S GS P t 245 ns 1 2 3 rr I = - 34A, -di/dt = -100A/s F Q 2.6 C RM V = -100V, V = 0V R GS I - 21.4 A RM e Terminals: 1 - Gate 2 - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 PRELIMINARY TECHNICAL INFORMATION b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 The product presented herein is under development. The Technical Specifications offered are derived b 2.87 3.12 .113 .123 2 from data gathered during objective characterizations of preliminary engineering lots but also may yet C .4 .8 .016 .031 contain some information supplied during a pre-production design evaluation. IXYS reserves the right D 20.80 21.46 .819 .845 to change limits, test conditions, and dimensions without notice. E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537