IXTH 6N120 V = 1200 V High Voltage DSS IXTT 6N120 I = 6 A D25 Power MOSFET R = 2.6 DS(on) N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V DSS J V T = 25C to 150C R = 1 M 1200 V DGR J GS V Continuous 20 V (TAB) GS V Transient 30 V GSM I T = 25C6A D25 C I T = 25C, pulse width limited by T 24 A TO-268 (IXTT) Case Style DM C JM I T = 25C6A AR C E T = 25C25mJ AR C G E T = 25C 500 mJ (TAB) AS C S dv/dt I I , di/dt 100 A/s, V V , 5 V/ns S DM DD DSS G = Gate D = Drain T 150C, R = 2 J G S = Source TAB = Drain P T = 25C 300 W D C T -55 ... +150 C J T 150 C JM Features T -55 ... +150 C stg z T 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages L z TM Low R HDMOS process M Mounting torque 1.13/10 Nm/lb.in. DS (on) d z Rugged polysilicon gate cell structure Weight TO-247 AD 6 g z Unclamped Inductive Switching (UIS) TO-268 4 g rated z Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J z Easy to mount V V = 0 V, I = 250 A 1200 V z DSS GS D Space savings z V V = V , I = 250A 2.5 5.0 V High power density GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V T = 25C25 A DSS DS DSS J V = 0 V T = 125C 500 A GS J R V = 10 V, I = 0.5 I 2.6 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99024B(01/04) 2004 IXYS All rights reservedIXTH 6N120 IXTT 6N120 Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 3 5 S fs DS D D25 1 2 3 C 1950 pF iss C V = 0 V, V = 25 V, f = 1 MHz 175 pF oss GS DS C 60 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 33 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 4.7 (External) 42 ns d(off) G 3 - Source Tab - Drain t 18 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 56 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = 10 V, V = 0.5 V , I = 0.5 I 13 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 25 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 R 0.42 K/W 2 thJC C .4 .8 .016 .031 R (TO-247) 0.21 K/W thCK D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values P 3.55 3.65 .140 .144 (T = 25C, unless otherwise specified) J Q 5.89 6.40 0.232 0.252 Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 6 A S GS I Repetitive 24 A SM TO-268 Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % ns T I = 6A 850 rr F -di/dt = 100 A/s Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343