High Voltage V = 1500V IXTT6N150 DSS I =6A Power MOSFETs IXTH6N150 D25 R 3.5 DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S V T = 25C to 150C 1500 V DSS J D (Tab) V T = 25C to 150C, R = 1M 1500 V DGR J GS V Continuous 20 V GSS TO-247 (IXTH) V Transient 30 V GSM I T = 25C6A D25 C I T = 25C, Pulse Width Limited by T 24 A DM C JM I T = 25C3A A C G E T = 25C 500 mJ D AS C D (Tab) S dv/dt I I , V V ,T 150C 5 V/ns S DM DD DSS J G = Gate D = Drain P T = 25C 540 W D C S = Source Tab = Drain T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C Features SOLD M Mounting Torque (TO247) 1.13 / 10 Nm/lb.in. z d International Standard Packages z Molding Epoxies Weet UL 94 V-0 Weight TO-268 4 g TO-247 6 g Flammability Classification z Fast Intrinsic Diode z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Easy to Mount BV V = 0V, I = 250A 1500 V z DSS GS D Space Savings z High Power Density V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 250 A z High Voltage Power Supplies J z Capacitor Discharge R V = 10V, I = 0.5 I , Note 1 3.5 DS(on) GS D D25 z Pulse Circuits 2012 IXYS CORPORATION, All Rights Reserved DS100233B(05/12)IXTT6N150 IXTH6N150 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 4.0 6.5 mS fs DS D D25 C 2230 pF iss C V = 0V, V = 25V, f = 1MHz 170 pF oss GS DS C 64 pF rss t 22 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 50 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 3 (External) G 3 - Source t 38 ns f Q 67 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 36 nC gd R 0.23 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 6 A S GS I Repetitive, Pulse Width Limited by T 24 A TO-247 Outline SM JM V I = 6A, V = 0V, Note 1 1.3 V SD F GS t 1.5 s rr I = 3A, -di/dt = 100A/s F I 12 A P RM 1 2 3 V = 100V, V = 0V R GS Q 9 C RM e Terminals: 1 - Gate 2 - Drain Note: 1. Pulse test, t 300s, duty cycle, d 2%. 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537