Advance Technical Information TM Linear V = 200V IXTT80N20L DSS Power MOSFET I = 80A IXTH80N20L D25 R 32m w/ Extended FBSOA DS(on) N-Channel Enhancement Mode Guaranteed FBSOA TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 200 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M 200 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 80 A D25 C G D D (Tab) I T = 25C, Pulse Width Limited by T 340 A S DM C JM I T = 25C 80 A A C E T = 25C 2.5 J G = Gate D = Drain AS C S = Source Tab = Drain P T = 25C 520 W D C T -55 to +150 C J T +150 C JM T -55 to +150 C stg Features T 1.6mm (0.063in) from Case for 10s 300 C L z Designed for Linear Operation T Plastic Body for 10s 260 C SOLD z International Standard Packages M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d z Avalanche Rated Weight TO-268 4 g z Guaranteed FBSOA at 75C TO-247 6 g Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 200 V DSS GS D Applications V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D z I V = 20V, V = 0V 100 nA GSS GS DS Solid State Circuit Breakers z Soft Start Controls I V = V , V = 0V 25 A DSS DS DSS GS z Linear Amplifiers T = 125C 250 A J z Programmable Loads R V = 10V, I = 0.5 I , Note 1 32 m z DS(on) GS D D25 Current Regulators 2010 IXYS CORPORATION, All Rights Reserved DS100294(11/10)IXTT80N20L IXTH80N20L Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 30 45 S fs DS D D25 C 6160 pF iss C V = 0V, V = 25V, f = 1MHz 1170 pF oss GS DS C 520 pF rss t 29 ns d(on) Resistive Switching Times t 44 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 72 ns d(off) R = 2 (External) G t 29 ns f Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Q 180 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 95 nC gd R 0.24 C/W thJC R TO-247 0.21 C/W thCS Safe Operating Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 200V, I = 0.75A, T = 75C, tp = 3s 150 W DS D C Source-Drain Diode TO-247 Outline Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 80 A S GS P 1 2 3 I Repetitive, Pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = I , -di/dt = 100A/s, t 250 ns F S rr V = 100V, V = 0V R GS e Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Note 1. Pulse test, t 300s, duty cycle, d 2%. Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 ADVANCE TECHNICAL INFORMATION C .4 .8 .016 .031 The product presented herein is under development. The Technical Specifications offered are derived D 20.80 21.46 .819 .845 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a E 15.75 16.26 .610 .640considered reflectio of the anticipated result. IXYS reserves the right to change limits, test e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 conditions, and dimensions without notice. L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537