X2-Class V = 650V IXTH80N65X2 DSS Power MOSFET I = 80A D25 R 38m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings D S D (Tab) V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS G = Gate D = Drain S = Source Tab = Drain V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C80A D25 C I T = 25 C, Pulse Width Limited by T 160 A DM C JM I T = 25 C10A A C Features E T = 25 C3J AS C dv/dt I I , V V , T 150C 15 V/ns International Standard Package S DM DD DSS J Low R and Q DS(ON) G P T = 25 C 890 W D C Avalanche Rated T -55 ... +150 C Low Package Inductance J T 150 C JM T -55 ... +150 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L High Power Density T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Easy to Mount M Mounting Torque 1.13 / 10 Nm/lb.in d Space Savings Weight 6 g Applications Switch-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV V = 0V, I = 1mA 650 V DSS GS D AC and DC Motor Drives Robotics and Servo Controls V V = V , I = 250A 2.7 5.0 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 400 A J R V = 10V, I = 0.5 I , Note 1 38 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100674B(4/18) IXTH80N65X2 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max D J A A B 0P O 0K M D B M+ E A2 A2 A2 A2 g V = 10V, I = 0.5 I , Note 1 36 72 S fs DS D D25 Q S D2 R + + R Gate Input Resistance 0.7 Gi D1 D 0P1 4 C 7800 pF iss 1 2 3 ixys option L1 C V = 0V, V = 25V, f = 1MHz 5600 pF oss GS DS C E1 C 10 pF L rss Effective Output Capacitance A1 b C 267 pF c b2 o(er) Energy related V = 0V b4 GS PINS: 1 - Gate e C 1160 pF V = 0.8 V o(tr) Time related DS DSS O J M C A M+ 2, 4 - Drain 3 - Source t 36 ns d(on) Resistive Switching Times t 11 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 72 ns d(off) R = 2 (External) G t 7 ns f Q 137 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 37 nC gs GS DS DSS D D25 Q 46 nC gd R 0.14 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 80 A S GS I Repetitive, pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 465 ns rr I = 40A, -di/dt = 100A/ s F Q 10 C RM V = 100V R I 43 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537