IXTH 8P50 V = -500 V Standard Power DSS IXTT 8P50 I = -8 A MOSFET D25 R = 1.2 P-Channel Enhancement Mode DS(on) Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C -500 V DSS J V T = 25C to 150C R = 1 M -500 V DGR J GS D (TAB) V Continuous 20 V GS V Transient 30 V GSM TO-268 (IXTT) I T = 25C-8A D25 C I T = 25C, pulse width limited by T -32 A DM C J I T = 25C-8A AR C E T = 25C30mJ G AR C S D (TAB) P T = 25C 180 W D C T -55 ... +150 C J G = Gate, D = Drain, T 150 C S = Source, TAB = Drain JM T -55 ... +150 C Features stg Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s International standard packages Plastic Body for 10s 250 C TM Low R HDMOS process DS (on) M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d Rugged polysilicon gate cell structure Weight TO-247 6 g Unclamped Inductive Switching (UIS) TO-268 5 g rated Low package inductance (<5 nH) - easy to drive and to protect Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Applications min. typ. max. High side switching V V = 0 V, I = -250 A -500 V DSS GS D BV Temperature Coefficient 0.054 %/K DSS Push-pull amplifiers V V = V , I = -250 A -3.0 -5.0 V GS(th) DS GS D DC choppers V Temperature Coefficient -0.122 %/K GS(th) Automatic test equipment I V = 20 V , V = 0 100 nA GSS GS DC DS I V = 0.8 V T =25C -200 A DSS DS DSS J Advantages V = 0 V T = 125C-1mA GS J Easy to mount with 1 screw R V = -10 V, I = 0.5 I 7P50 1.5 DS(on) GS D D25 (isolated mounting screw hole) 8P50 1.2 Space savings R Temperature Coefficient 0.6 %/K DS(on) High power density 2005 IXYS All rights reserved DS94534F(02/05)IXTH 8P50 IXTT 8P50 Symbol Test Conditions Characteristic Values TO-247 (IXTH) Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = -10 V I = I , pulse test 4 5 S fs DS D D25 1 2 3 C 3400 pF iss C V = 0 V, V = -25 V, f = 1 MHz 450 pF oss GS DS C 175 pF rss t 33 ns d(on) t V = -10 V, V = 0.5 V I = 0.5 I 27 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 4.7 (External) 35 ns d(off) G 3 - Source Tab - Drain t 35 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 130 nC g(on) A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 Q V = -10 V, V = 0.5 V I = 0.5 I 32 nC 1 gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 Q 64 nC gd b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 R 0.7 K/W 2 thJC C .4 .8 .016 .031 R (TO-247) 0.25 K/W thCS D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 Source-Drain Diode Characteristic Values S 6.15 BSC 242 BSC (T = 25C, unless otherwise specified) J TO-268 (IXTT) Outline Symbol Test Conditions min. typ. max. I V = 0 -8 A S GS I Repetitive pulse width limited by T -32 A SM JM V I = I , V = 0 V, -3 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , di/dt = 100 A/s 400 ns rr F S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2