TM PolarP V = - 100V IXTT90P10P DSS I = - 90A Power MOSFETs IXTH90P10P D25 R 25m DS(on) D P-Channel Enhancement Mode Avalanche Rated G TO-268 (IXTT) S G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25C to 150C -100 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M -100 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C - 90 A D25 C G D I T = 25C, Pulse Width Limited by T - 225 A D (Tab) DM C JM S I T = 25C - 90 A A C E T = 25C 2.5 J G = Gate D = Drain AS C S = Source Tab = Drain dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 462 W D C T - 55 ... +150 C J T 150 C JM T - 55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Features: T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. z d International Standard Packages z Avalanche Rated Weight TO-268 6 g z TO-247 4 g Fast Intrinsic Diode z TM Rugged PolarP Process z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Space Savings z BV V = 0V, I = - 250A -100 V DSS GS D High Power Density V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS z High-Side Switches I V = V , V = 0V - 25 A z DSS DS DSS GS Push Pull Amplifiers T = 125C - 200 A z J DC Choppers z Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 25 m DS(on) GS D D25 z Current Regulators DS99986B(01/13) 2013 IXYS CORPORATION, All Rights ReservedIXTT90P10P IXTH90P10P Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 22 37 S fs DS D D25 C 5800 pF iss C V = 0V, V = - 25V, f = 1MHz 1990 pF oss GS DS C 510 pF rss t 25 ns d(on) Resistive Switching Times t 77 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 54 ns d(off) Terminals: 1 - Gate 2,4 - Drain R = 3 (External) G 3 - Source t 32 ns f Q 120 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 23 nC gs GS DS DSS D D25 Q 60 nC gd R 0.27 C/W thJC R TO-247 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 90 A S GS I Repetitive, Pulse Width Limited by T - 360 A TO-247 Outline SM JM V I = - 45A, V = 0V, Note 1 - 3.3 V SD F GS t 144 ns I = - 45A, -di/dt = -100A/s rr F Q 0.92 C RM V = - 50V, V = 0V P R GS 1 2 3 I -12.8 A RM e Note 1: Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537