X4-Class V = 200V IXTH94N20X4 DSS TM Power MOSFET I = 94A D25 R 10.6m DS(on) D N-Channel Enhancement Mode G Avalanche Rated S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G D S V T = 25 C to 175 C 200 V D (Tab) DSS J V T = 25 C to 175 C, R = 1M 200 V DGR J GS G = Gate D = Drain V Continuous 20 V GSS S = Source Tab = Drain V Transient 30 V GSM I T = 25 C 94 A D25 C I T = 25 C, Pulse Width Limited by T 220 A DM C JM Features I T = 25 C 47 A A C E T = 25 C 1 J AS C International Standard Package dv/dt I I , V V , T 150C 20 V/ns Low R and Q S DM DD DSS J DS(ON) G Avalanche Rated P T = 25 C 360 W D C Low Package Inductance T -55 ... +175 C J T 175 C JM Advantages T -55 ... +15 C stg High Power Density T Maximum Lead Temperature for Soldering 300 C L Easy to Mount 1.6 mm (0.062 in.) from Case for 10s Space Savings M Mounting Torque 1.13 / 10 Nm/lb.in d Weight 6 g Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. AC and DC Motor Drives J Robotics and Servo Controls BV V = 0V, I = 250A 200 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 20 A DSS DS DSS GS T = 150 C 500 A J R V = 10V, I = 0.5 I , Note 1 10.6 m DS(on) GS D D25 DS101011B(12/20) 2020 Littelfuse, Inc. IXTH94N20X4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 60 100 S fs DS D D25 R Gate Input Resistance 5.3 Gi C 5050 pF iss C V = 0V, V = 25V, f = 1MHz 750 pF oss GS DS C 4 pF rss Effective Output Capacitance C 390 pF o(er) Energy related V = 0V GS C 1670 pF V = 0.8 V o(tr) Time related DS DSS t 18 ns d(on) Resistive Switching Times t 9 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 97 ns d(off) R = 5 (External) G t 7 ns f Q 77 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 21 nC gs GS DS DSS D D25 Q 25 nC gd R 0.42 C/W thJC R 0.21 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 94 A S GS I Repetitive, pulse Width Limited by T 376 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 130 ns rr I = 47A, -di/dt = 200A/s F Q 1.1 C RM V = 100V R I 17 A RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537