High Voltage V = 1500V IXTJ4N150 DSS I = 2.5A Power MOSFET D25 R 6 DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM ISO TO-247 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1500 V DSS J G D V T = 25 C to 150 C, R = 1M 1500 V Isolated Tab DGR J GS S V Continuous 30 V GSS V Transient 40 V G = Gate D = Drain GSM S = Source T = 25 C 2.5 A I D25 C I T = 25 C, Pulse Width Limited by T 12 A DM C JM I T = 25 C4A A C E T = 25 C 350 mJ AS C dv/dt I I , V V ,T 150 C 5 V/ns S DM DD DSS J Features P T = 25 C 110 W D C Silicon Chip on Direct-Copper Bond T - 55 ... +150 C J (DCB) Substrate T 150 C JM Isolated Mounting Surface T - 55 ... +150 C stg 2500V~ Electrical Isolation T Maximum Lead Temperature for Soldering 300 C L Fast Intrinsic Diode T 1.6 mm (0.062in.) from Case for 10s 260 C Avalanche Rated SOLD Molding Epoxies meet UL 94 V-0 M Mounting Torque 1.13/10 Nm/lb.in d Flammability Classification Weight 5 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV V = 0V, I = 250 A 1500 V DSS GS D High Voltage Power Supplies Capacitor Discharge Applications V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D Pulse Circuits I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 10 A DSS DS DSS GS T = 125C 100A J R V = 10V, I = 2A, Note 1 6 DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS100449C(12/17)IXTJ4N150 Symbol Test Conditions Characteristic Values ISO TO-247 (IXTJ) OUTLINE (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 2A, Note 1 2.8 4.6 S fs DS D C 1576 pF iss C V = 0V, V = 25V, f = 1MHz 105 pF oss GS DS C 35 pF rss t 19 ns d(on) Resistive Switching Times t 23 ns r V = 10V, V = 0.5 V , I = 2A GS DS DSS D t 42 ns d(off) R = 5 (External) PINS: G t 22 ns 1 = Gate f 2 = Drain Q 44.5 nC g(on) 3 = Source 4 = Isolated Q V = 10V, V = 0.5 V , I = 2A 7.7 nC gs GS DS DSS D Q 12.7 nC gd R 1.13 C/W thJC R 0.30 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 4 A S GS I Repetitive, Pulse Width Limited by T 1.6 A SM JM V I = 4A, V = 0V, Note 1 1.3 V SD F GS t 0.9 s rr I = 2A, -di/dt = 100A/ s F I 15.0 A RM V = 100V, V = 0V R GS Q 6.7 C RM Note: 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537