TM IXTK 100N25P V = 250 V DSS PolarHT IXTQ 100N25P I = 100 A D25 Power MOSFET IXTT 100N25P R 27 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C R = 1 M 250 V DGR J GS V Continuous 20 V GSS G D (TAB) D V Transient 30 V S GSM I T = 25 C 100 A D25 C I External lead current limit 75 A D(RMS) TO-3P (IXTQ) I T = 25 C, pulse width limited by T 250 A DM C JM I T = 25C60A AR C E T = 25C60mJ AR C G E T = 25 C 2.0 J AS C D (TAB) S dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G TO-268 (IXTT) P T = 25 C 600 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg G S D (TAB) T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD G = Gate D = Drain M Mounting torque 1.13/10 Nm/lb.in. d S = Source TAB = Drain Weight TO-3P 5.5 g TO-264 10 g Features TO-268 5.0 g l International standard packages l Unclamped Inductive Switching (UIS) Symbol Test Conditions Characteristic Values rated (T = 25 C, unless otherwise specified) Min. Typ. Max. J l Low package inductance BV V = 0 V, I = 250 A 250 V - easy to drive and to protect DSS GS D V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D Advantages I V = 20 V , V = 0 100 nA GSS GS DC DS l Easy to mount I V = V 25 A DSS DS DSS l Space savings V = 0 V T = 125 C 250 A GS J l High power density R V = 10 V, I = 0.5 I 27 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99118E(12/05) 2006 IXYS All rights reservedIXTK 100N25P IXTQ 100N25P IXTT 100N25P TO-3P (IXTQ) Outline Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 40 56 S fs DS D D25 C 6300 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1150 pF oss GS DS C 240 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 V , I = I 26 ns r GS DS DSS D D25 t R = 3.3 (External) 100 ns d(off) G t 28 ns f Q 185 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 43 nC gs GS DS DSS D D25 Q 91 nC gd R 0.21 C/W thJC R TO-3P 0.21 C/W thCS R TO-264 0.15 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 100 A S GS TO-264 (IXTK) Outline I Repetitive 250 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 200 ns rr F Q V = 100 V, V = 0 V 3.0 C RM R GS TO-268 (IXTT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2