X2-Class V = 650V IXTK102N65X2 DSS Power MOSFET I = 102A IXTX102N65X2 D25 R 30m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V D DSS J Tab V T = 25 C to 150 C, R = 1M 650 V S DGR J GS V Continuous 30 V PLUS247 (IXTX) GSS V Transient 40 V GSM I T = 25 C 102 A D25 C I T = 25 C, Pulse Width Limited by T 204 A DM C JM I T = 25 C25A A C G D E T = 25 C3J AS C Tab S P T = 25 C 1040 W D C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J G = Gate D = Drain T -55 ... +150 C S = Source Tab = Drain J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-264P) 1.13/10 Nm/lb.in Low Q d G Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Package Inductance Weight TO-264P 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS PFC Circuits T = 125C 350 A J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 30 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100655B(4/18)IXTK102N65X2 IXTX102N65X2 Symbol Test Conditions Characteristic Values TO-264P Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J E A E1 g V = 10V, I = 0.5 I , Note 1 50 82 S fs DS D D25 Q R Gate Input Resistance 0.7 R Gi Q1 D1 D C 10.9 nF iss R1 4 C V = 0V, V = 25V, f = 1MHz 6100 pF 1 2 3 L1 oss GS DS D2 C 12.6 pF rss Effective Output Capacitance C 367 pF o(er) Energy related c V = 0V GS C 1420 pF b1 b A V = 0.8 V o(tr) Time related b2 DS DSS x2 e Terminals: 1 = Gate 2,4 = Drain t 37 ns d(on) 3 = Source Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 67 ns d(off) R = 2 (External) G t 11 ns f Q 152 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 57 nC gs GS DS DSS D D25 Q 33 nC gd R 0.12 C/W thJC R 0.15 C/W thCS Source-Drain Diode TM PLUS247 Outline Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 102 A S GS I Repetitive, Pulse Width Limited by T 408 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 450 ns rr I = 51A, -di/dt = 100A/ s F Q 11.7 C RM V = 100V, V = 0V R GS I 52 A RM Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537