Preliminary Technical Information X2-Class V = 650V IXTK120N65X2 DSS Power MOSFET I = 120A IXTX120N65X2 D25 R 23m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V D DSS J Tab V T = 25 C to 150 C, R = 1M 650 V S DGR J GS V Continuous 30 V PLUS247 (IXTX) GSS V Transient 40 V GSM I T = 25 C 120 A D25 C I T = 25 C, Pulse Width Limited by T 240 A DM C JM I T = 25 C15A A C G D E T = 25 C 3.5 J AS C Tab S P T = 25 C 1250 W D C G = Gate D = Drain dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD International Standard Packages M Mounting Torque (TO-264P) 1.13/10 Nm/lb.in Low Q d G Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Package Inductance Weight TO-264P 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 1mA 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA Power Supplies GSS GS DS DC-DC Converters I V = V , V = 0V 25 A DSS DS DSS GS PFC Circuits T = 125C 500 A J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 23 m DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS100677B(03/16)IXTK120N65X2 IXTX120N65X2 Symbol Test Conditions Characteristic Values TO-264P Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J E A E1 g V = 10V, I = 0.5 I , Note 1 66 110 S fs DS D D25 Q R Gate Input Resistance 0.77 R Gi Q1 D1 D C 13.6 nF iss R1 4 C V = 0V, V = 25V, f = 1MHz 9500 pF 1 2 3 L1 oss GS DS D2 C 8.9 pF rss Effective Output Capacitance C 425 pF o(er) Energy related c V = 0V GS C 1960 pF b1 b A V = 0.8 V o(tr) Time related b2 DS DSS x2 e Terminals: 1 = Gate 2,4 = Drain t 32 ns d(on) 3 = Source Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 87 ns d(off) R = 1 (External) G t 10 ns f Q 230 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 74 nC gs GS DS DSS D D25 Q 65 nC gd R 0.10C/W thJC R 0.15C/W thCS TM PLUS247 Outline A E E1 Q A2 Source-Drain Diode D2 R D1 Symbol Test Conditions Characteristic Values D (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. 4 J 1 2 3 L1 I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 480 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS e A1 b t 505 ns 3 PLCS b2 2 PLCS 2 PLCS C rr I = 60A, -di/dt = 100A/ s b4 F Q 15 C RM Terminals: 1 - Gate V = 100V, V = 0V 2,4 - Drain R GS I 58 A RM 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537