TM Polar V = 150V IXTK180N15P DSS I = 180A Power MOSFET D25 R 11m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 150 V DSS J V T = 25 C to 175 C, R = 1M 150 V DGR J GS G D V Continuous 20 V GSS S V Transient 30 V GSM Tab I T = 25 C 180 A D25 C G = Gate D = Drain I External Lead Current Limit 75 A L(RMS) S = Source Tab = Drain I T = 25 C, Pulse Width Limited by T 380 A DM C JM I T = 25 C60A A C E T = 25 C4J AS C P T = 25 C 800 W D C dv/dt I I , V V , T 175C 10 V/ns S DM DD DSS J T -55 ... +175 C J Features T 175 C JM T -55 ... +175 C stg International Standard Package T 1.6mm (0.062 in.) from Case for 10s 300 C Avalanche Rated L T Plastic Body for 10s 260 C Low Package Inductance SOLD Fast intrinsic Diode M Mounting Torque 1.13/10 Nm/lb.in. d Dynamic dv/dt Rated Weight 10 g Low R and Q DS(on) G Advantages Easy to mount Space savings Symbol Test Conditions Characteristic Values High power density (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 150 V DSS GS D V V = V , I = 500A 2.5 5.0 V GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 150C 250 A J R V = 10V, I = 0.5 I , Note 1 11 m DS(on) GS D D25 2015 IXYS CORPORATION,All Rights Reserved DS99297G(8/15)IXTK180N15P Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 55 86 S fs DS D DSS C 7000 pF iss C V = 0V, V = 25V, f = 1MHz 2250 pF oss GS DS C 515 pF rss t 30 ns d(on) Resistive Switching Times Terminals: 1 - Gate t 32 ns r V = 10V, V = 0.5 V , I = 60A 2 - Drain GS DS DSS D 3 - Source t 150 ns d(off) 4 - Drain R = 3.3 (External) G Dim. Millimeter Inches t 36 ns f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 240 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = 10V, V = 0.5 V , I = 0.5 I 55 nC gs GS DS DSS D DSS b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q 140 nC gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R 0.18 C/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.15 C/W thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Source-Drain Diode Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 Symbol Test Conditions Characteristic Values R1 1.78 2.29 .070 .090 (T = 25 C Unless Otherwise Specified) Min. Typ. Max. S 6.04 6.30 .238 .248 J T 1.57 1.83 .062 .072 I V = 0V 180 A S GS I Repetitive, Pulse Width Limited by T 380 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 150 ns I = 25A, -di/dt = 100A/ s rr F Q 2.3 C RM V = 100V, V = 0V R GS Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537