Advance Technical Information TM Linear L2 Power V = 100V IXTK200N10L2 DSS MOSFET w/ Extended I = 200A IXTX200N10L2 D25 FBSOA R < 11m DS(on) N-Channel Enhancement Mode Guaranteed FBSOA TO-264 (IXTK) Avalanche Rated Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 100 V DSS J D Tab S V T = 25C to 150C, R = 1M 100 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM PLUS247(IXTX) I T = 25C (Chip Capability) 200 A D25 C I Lead Current Limit, (RMS) 160 A LRMS I T = 25C, Pulse Width Limited by T 500 A DM C JM I T = 25C 100 A A C G E T = 25C5 J AS C D Tab S P T = 25C 1040 W D C T -55...+150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55...+150 C stg T 1.6mm (0.063 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD Features M Mounting Torque (IXTK) 1.13/10 Nm/lb.in. d z Designed for Linear Operation F Mounting Force (IXTX) 20..120 / 4.5..27 N/lb. C z Avalanche Rated Weight TO-264 10 g z Guaranteed FBSOA at 75C PLUS247 6 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 100 V DSS GS D z V V = V , I = 3mA 2.0 4.5 V Solid State Circuit Breakers GS(th) DS GS D z Soft Start Controls I V = 20V, V = 0V 200 nA z GSS GS DS Linear Amplifiers z Programmable Loads I V = V , V = 0V 10 A DSS DS DSS GS z Current Regulators T = 125C 250 A J R V = 10V, I = 0.5 I , Note 1 11 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS100239(2/10) IXTK200N10L2 IXTX200N10L2 Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 55 73 90 S fs DS D C 23 nF iss C V = 0V, V = 25V, f = 1MHz 3200 pF oss GS DS C 610 pF rss t 40 ns d(on) Resistive Switching Times t 225 ns r V = 10V, V = 0.5 V , I = 0.5 I 1 - Gate GS DS DSS D D25 t 127 ns 2 - Drain d(off) 3 - Source R = 1 (External) G 4 - Drain t 27 ns f Millimeter Inches Dim. Min. Max. Min. Max. Q 540 nC g(on) A 4.82 5.13 .190 .202 Q V = 10V, V = 0.5 V , I = 0.5 I 115 nC gs GS DS DSS D D25 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 226 nC gd b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 R 0.12 C/W b2 2.90 3.09 .114 .122 thJC c 0.53 0.83 .021 .033 R 0.15 C/W thCS D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 Safe-Operating-Area Specification L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 Min. Typ. Max. R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 SOA V = 100V, I = 6.25A, T = 75C, tp = 5s 625 W S 6.04 6.30 .238 .248 DS D C T 1.57 1.83 .062 .072 TM PLUS 247 (IXTX) Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 200 A S GS I Repetitive, Pulse Width Limited by T 800 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 245 ns rr I = 100A, -di/dt = 100A/s, F I 24.4 A RM V = 50V, V = 0V R GS Q 3.0 C Terminals: 1 - Gate RM 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. Note 1. Pulse test, t 300s, duty cycle, d 2%. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 ADVANCE TECHNICAL INFORMATION b 2.92 3.12 .115 .123 2 The product presented herein is under development. The Technical Specifications offered are derived C 0.61 0.80 .024 .031 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a D 20.80 21.34 .819 .840considered reflectio of the anticipated result. IXYS reserves the right to change limits, test E 15.75 16.13 .620 .635 conditions, and dimensions without notice. e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537