TM V = 100 V IXTK 200N10P PolarHT DSS I = 200 A D25 Power MOSFET R 7.5 m DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXTK) V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C R = 1 M 100 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM G I T = 25 C 200 A D25 C D (TAB) S I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 400 A DM C JM G = Gate D = Drain I T = 25C60A AR C S = Source TAB = Drain E T = 25 C 100 mJ AR C E T = 25C4J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G Features P T = 25 C 800 W D C l International standard package T -55 ... +175 C J l Unclamped Inductive Switching (UIS) T 175 C JM rated T -55 ... +150 C stg l Low package inductance T 1.6 mm (0.062 in.) from case for 10 s 300 C - easy to drive and to protect L T Plastic body for 10 s 260 C SOLD M Mounting torque 1.13/10 Nm/lb.in. d Advantages Weight 10 g l Easy to mount l Space savings l High power density Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 100 V DSS GS D V V = V , I = 500A 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 150 C 250 A GS J R V = 10 V, I = 0.5 I 7.5 m DS(on) GS D D25 V = 15 V, I = 400A 5.5 m GS D Pulse test, t 300 s, duty cycle d 2 % DS99186E(10/05) 2006 IXYS All rights reserved IXTK 200N10P Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 60 97 S fs DS D D25 C 7600 pF iss C V = 0 V, V = 25 V, f = 1 MHz 2900 pF oss GS DS C 860 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 35 ns r GS DS DSS D t R = 3.3 (External) 150 ns d(off) G Dim. Millimeter Inches t 90 ns f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 240 nC A1 2.54 2.89 .100 .114 g(on) A2 2.00 2.10 .079 .083 Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC b 1.12 1.42 .044 .056 gs GS DS DSS D D25 b1 2.39 2.69 .094 .106 Q 135 nC b2 2.90 3.09 .114 .122 gd c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R 0.18C/W thJC E 19.81 19.96 .780 .786 R 0.15 C/W e 5.46 BSC .215 BSC thCS J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Source-Drain Diode Characteristic Values Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 (T = 25 C, unless otherwise specified) J R 3.81 4.32 .150 .170 Symbol Test Conditions Min. Typ. Max. R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 I V = 0 V 200 A T 1.57 1.83 .062 .072 S GS I Repetitive 400 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 100 ns rr F Q V = 50 V, V = 0 V 3.0 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2