IXTK 250N10 V = 100 V DSS High Current TM I = 250 A MegaMOS FET D25 R = 5 m DS(on) N-Channel Enhancement Mode Symbol Test conditions Maximum ratings TO-264 AA (IXTK) V T = 25C to 150C 100 V DSS J V T = 25C to 150C R = 1.0 M 100 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM D (TAB) G I T = 25C MOSFET chip capability 250 A D25 C D I External lead current limit 75 A S D(RMS) I T = 25C, pulse width limited by T 1000 A DM C JM I T = 25C90A AR C G = Gate D = Drain S = Source Tab = Drain E T = 25C80mJ AR C E T = 25C 4.0 J AS C dv/dt I I , di/dt 100 A/s, V V 5 V/ns S DM DD DSS T 150C, R = 2 J G P T = 25C 730 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features TM T 1.6 mm (0.063 in.) from case for 10 s 300 C Low R HDMOS process L DS (on) Rugged polysilicon gate cell structure M Mounting torque 0.7/6 Nm/lb.in. d International standard package Weight TO-264 10 g Fast switching times Applications Motor controls DC choppers Symbol Test Conditions Characteristic Values Switched-mode power supplies (T = 25C unless otherwise specified) Min. Typ. Max. J DC-DC Converters Linear Regulators V V = 0 V, I = 1 mA 100 V DSS GS D Advantages V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Easy to mount with one screw (isolated mounting screw hole) I V = 20 V DC, V = 0 200 nA GSS GS DS Space savings I V = V T = 25C 50 A High power density DSS DS DSS J V = 0 V T = 125C 1 mA GS J R V = 10 V, I = 90 A 5 m DS(on) GS D Pulse test, t 300 ms, duty cycle d 2% 2004 IXYS All rights reserved DS99022A(04/04)IXTK 250N10 Symbol Test Conditions Characteristic values TO-264 AA Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 10 V I = 90 A, pulse test 75 110 S fs DS D C 12700 pF iss C V = 0 V, V = 25 V, f = 1 MHz 3700 pF oss GS DS C 1490 pF rss t 35 ns d(on) t V = 10 V, V = 0.5 V , I = 90 A 40 ns r GS DS DSS D t R = 1.0 (External) 120 ns d(off) G t 55 ns Dim. Millimeter Inches f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 430 nC A1 2.54 2.89 .100 .114 g(on) A2 2.00 2.10 .079 .083 Q V = 10 V, V = 0.5 V , I = 0.5 I 70 nC b 1.12 1.42 .044 .056 gs GS DS DSS D D25 b1 2.39 2.69 .094 .106 Q 225 nC b2 2.90 3.09 .114 .122 gd c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R 0.17 K/W thJC E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC R 0.15 K/W thCK J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Source-Drain Diode Ratings and Characteristics (T = 25C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0V 250 A S GS I Repetitive pulse width limited by T 1000 A SM JM V I = 90 A, V = 0 V, 1.2 V SD F GS Pulse test, t 300 s, duty cycle d 2 % t I = 30A, -di/dt = 100 A/s, V = 50 V 150 ns rr F R Q 2 C rr IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344