TM PolarP V = - 600V IXTK32P60P DSS Power MOSFET I = - 32A IXTX32P60P D25 R 350m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G D V T = 25 C to 150 C - 600 V DSS J S V T = 25 C to 150 C, R = 1M - 600 V DGR J GS Tab V Continuous 20 V GSS V Transient 30 V PLUS247 (IXTX) GSM I T = 25 C - 32 A D25 C I T = 25 C, Pulse Width Limited by T - 96 A DM C JM I T = 25 C - 32 A A C E T = 25 C 3.5 J G AS C D Tab S dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 890 W G = Gate D = Drain D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C Features L T Plastic Body for 10s 260 C SOLD International Standard Packages M Mounting Force (PLUS247) 20..120/4.5..27 N/lb. d TM Rugged PolarP Process Mounting Torque (TO-264) 1.13/10 Nm/lb.in. Avalanche Rated Weight PLUS247 6 g Low Package Inductance TO-264 10 g Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = - 250A - 600 V DSS GS D V V = V , I = -1mA - 2.0 - 4.0 V Applications GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS High-Side Switches I V = V , V = 0V - 50A Push Pull Amplifiers DSS DS DSS GS T = 125C - 250A DC Choppers J Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 350 m DS(on) GS D D25 Current Regulators 2015 IXYS CORPORATION, All rights reserved DS99990C(3/15) IXTK32P60P IXTX32P60P Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 21 32 S fs DS D D25 C 11.1 nF iss C V = 0V, V = - 25V, f = 1MHz 925 pF oss GS DS C 77 pF rss t 37 ns d(on) Resistive Switching Times t 27 ns Terminals: 1 - Gate r V = -10V, V = 0.5 V , I = 0.5 I 2 - Drain GS DS DSS D D25 3 - Source t 95 ns d(off) R = 1 (External) 4 - Drain G Dim. Millimeter Inches t 33 ns f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 196 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = -10V, V = 0.5 V , I = 0.5 I 54 nC gs GS DS DSS D D25 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q 58 nC gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R 0.14 C/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.15 C/W thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 Source-Drain Diode P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 I V = 0V - 32 A S GS T 1.57 1.83 .062 .072 I Repetitive, pulse width limited by T -128 A SM JM TM PLUS 247 Outline V I = -16A, V = 0V, Note 1 - 2.8 V SD F GS t 480 nS rr I = -16A, -di/dt = -150A/ s F Q 11.4 C RM V = -100V, V = 0V R GS I - 47.6 A RM Note 1: Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537