X-On Electronics has gained recognition as a prominent supplier of IXTK82N25P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTK82N25P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTK82N25P IXYS

IXTK82N25P electronic component of IXYS
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See Product Specifications
Part No.IXTK82N25P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 82 Amps 250V 0.035 Rds
Datasheet: IXTK82N25P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.277 ea
Line Total: USD 6.28 
Availability - 284
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
284
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 6.277
10 : USD 6.0184
25 : USD 5.3156
100 : USD 5.1856

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTK82N25P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTK82N25P and other electronic components in the MOSFETs category and beyond.

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TM V = 250V IXTT82N25P DSS Polar I = 82A IXTQ82N25P D25 Power MOSFET R 38m IXTK82N25P DS(on) TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 250 V TO-3P( IXTQ) DSS J V T = 25 C to 150 C, R = 1M 250 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D S I T = 25 C82A D25 C D (Tab) I Lead Current Limit 75 A LRMS I T = 25 C, Pulse Width Limited by T 200 A DM C JM TO-264 (IXTK) P T = 25 C 500 W D C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C D stg S T Maximum Lead Temperature for Soldering 300 C L D (Tab) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD G = Gate D = Drain M Mounting Torque (TO-3P&TO-264) 1.13 / 10 Nm/lb.in S = Source Tab = Drain d Weight TO-268 4.0 g TO-3P 5.5 g TO-264 10.0 g Features Fast Intrinsic Rectifier Avalanche Rated Low R and Q DS(ON) G Low Package Inductance Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 250 V High Power Density DSS GS D Easy to Mount V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D Space Savings I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 250 A J Switch-Mode and Resonant-Mode Power Supplies R V = 10V, I = 0.5 I , Note 1 38 m DS(on) GS D D25 DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99121F(7/14) 2014 IXYS All Rights Reserved IXTT82N25P IXTQ82N25P IXTK82N25P Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 30 52 S fs DS D D25 C 4800 pF iss C V = 0V, V = 25V, f = 1MHz 900 pF oss GS DS C 210 pF rss t 29 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 78 ns d(off) R = 1 (External) G t 22 ns f Q 142 nC g(on) V = 10V, V = 0.5 V , I = 0.5 I Q 32GS DS DSS D D25 nC gs Q 74 nC gd R 0.25 C/W thJC R TO-3P 0.21 C/W thCS TO-264 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 82 A S GS TO-264 AA Outline I Repetitive, pulse Width Limited by T 328 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS I = 25A, -di/dt = 100A/ s t 200 ns F rr Q 2 C V = 100V RM R Terminals: 1 - Gate 2 - Drain Note 1. Pulse test, t 300 s, duty cycle, d 2%. 3 - Source 4 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 TO-268 Outline A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Terminals: 1 - Gate 2,4 - Drain R 3.81 4.32 .150 .170 3 - Source R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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