TM V = 250V IXTT82N25P DSS Polar I = 82A IXTQ82N25P D25 Power MOSFET R 38m IXTK82N25P DS(on) TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 250 V TO-3P( IXTQ) DSS J V T = 25 C to 150 C, R = 1M 250 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D S I T = 25 C82A D25 C D (Tab) I Lead Current Limit 75 A LRMS I T = 25 C, Pulse Width Limited by T 200 A DM C JM TO-264 (IXTK) P T = 25 C 500 W D C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C D stg S T Maximum Lead Temperature for Soldering 300 C L D (Tab) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD G = Gate D = Drain M Mounting Torque (TO-3P&TO-264) 1.13 / 10 Nm/lb.in S = Source Tab = Drain d Weight TO-268 4.0 g TO-3P 5.5 g TO-264 10.0 g Features Fast Intrinsic Rectifier Avalanche Rated Low R and Q DS(ON) G Low Package Inductance Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 250 V High Power Density DSS GS D Easy to Mount V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D Space Savings I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 250 A J Switch-Mode and Resonant-Mode Power Supplies R V = 10V, I = 0.5 I , Note 1 38 m DS(on) GS D D25 DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99121F(7/14) 2014 IXYS All Rights Reserved IXTT82N25P IXTQ82N25P IXTK82N25P Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 30 52 S fs DS D D25 C 4800 pF iss C V = 0V, V = 25V, f = 1MHz 900 pF oss GS DS C 210 pF rss t 29 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 78 ns d(off) R = 1 (External) G t 22 ns f Q 142 nC g(on) V = 10V, V = 0.5 V , I = 0.5 I Q 32GS DS DSS D D25 nC gs Q 74 nC gd R 0.25 C/W thJC R TO-3P 0.21 C/W thCS TO-264 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 82 A S GS TO-264 AA Outline I Repetitive, pulse Width Limited by T 328 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS I = 25A, -di/dt = 100A/ s t 200 ns F rr Q 2 C V = 100V RM R Terminals: 1 - Gate 2 - Drain Note 1. Pulse test, t 300 s, duty cycle, d 2%. 3 - Source 4 - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.82 5.13 .190 .202 TO-268 Outline A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Terminals: 1 - Gate 2,4 - Drain R 3.81 4.32 .150 .170 3 - Source R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537