Advance Technical Information High Voltage V = 4700V IXTL2N470 DSS Power MOSFET I = 2A D25 R 20 DS(on) (Electrically Isolated Tab) TM ISOPLUS i5-Pak N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 4700 V DSS J S Isolated Tab V T = 25 C to 150 C, R = 1M 4700 V D DGR J GS V Continuous 20 V GSS G = Gate S = Source V Transient 30 V GSM D = Drain I T = 25 C2A D25 C I T = 25 C, Pulse Width Limited by T 8A DM C JM P T = 25 C 220 W D C T - 55 ... +150 C Features J T 150 C JM T - 55 ... +150 C Silicon Chip on Direct-Copper Bond stg (DCB) Substrate T Maximum Lead Temperature for Soldering 300 C L Isolated Mounting Surface T Plastic Body for 10s 260 C SOLD 4000V~ RMS Electrical Isolation F Mounting Force 20..120 / 4.5..27 N/lb. Molding Epoxies meet UL 94 V-0 C Flammability Classification V 50/60Hz, 1 Minute 4000 V~ ISOL Weight 8 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V V = V , I = 250A 3.5 6.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS High Voltage Power Supplies I V = 3.6kV, V = 0V 10 A Capacitor Discharge Applications DSS DS GS V = 4.7kV 50 A Pulse Circuits DS V = 3.6kV Note 2, T = 125C 250 A Laser and X-Ray Generation Systems DS J R V = 10V, I = 0.5 I , Note 1 20 DS(on) GS D D25 2016 IXYS CORPORATION, All Rights Reserved DS100759(11/16)IXTL2N470 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 60V, I = 0.5 I , Note 1 2.1 3.5 S fs DS D D25 C 6860 pF iss C V = 0V, V = 25V, f = 1MHz 267 pF oss GS DS C 105 pF rss R Integrated Gate Input Resistance 4.0 Gi t 40 ns d(on) Resistive Switching Times t 34 ns r V = 10V, V = 1kV, I = 1A GS DS D t 123 ns d(off) R = 0 (External) t G 205 ns f Q 180 nC g(on) Q V = 10V, V = 1kV, I = 0.5 I 34 nC gs GS DS D D25 Q 83 nC gd R 0.56 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 2 A S GS I Repetitive, Pulse Width Limited by T 8 A SM JM V I = I , V = 0V, Note 1 3 V SD F S GS t I = 2A, -di/dt = 100A/ s, V = 100V 1.75 s rr F R Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Part must be heatsunk for high-temp Idss measurement. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537