IXTP 01N100D V = 1000 V High Voltage MOSFET DSS IXTU 01N100D I = 100 mA D25 N-Channel, Depletion Mode IXTY 01N100D R = 110 DS(on) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25C to 150C 1000 V DSX J V T = 25C to 150C 1000 V DGX J V Continuous 20 V GS D (TAB) V Transient 30 V G GSM D S I T = 25C T = 25C to 150C 100 mA DSS C J I T = 25C, pulse width limited by T 400 mA DM C J TO-251 (IXTU) P T = 25C 25 W D C T = 25C 1.1 W A T -55 ... +150 C J T 150 C JM G D T -55 ... +150 C D (TAB) stg S T 1.6 mm (0.063 in.) from case for 10 s 300 C L T Plastic case for 10 s (IXTU) 300 C ISOL TO-252 (IXTY) M Mounting torque TO-220 1.3 / 10 Nm/lb. d Weight TO-220 4 g TO-251 0.8 g G TO-252 0.8 g S D (TAB) Pins: 1 - Gate 2 - Drain 3 - Source TAB - Drain Symbol Test Conditions Characteristic Values Features (T = 25C, unless otherwise specified) min. typ. max. J z Normally ON mode V V = -10 V, I = 25 A 1000 V DSX GS D z TM Low R HDMOS process DS (on) V V = 25V, I = 25 A -2.5 -5 V GS(off) DS D z Rugged polysilicon gate cell structure z I V = 20 V , V = 0 100 nA GSS GS DC DS Fast switching speed I V = V ,V = -10 V 10 A DSX(off) DS DSX GS Applications T = 125C 250 A J z Level shifting z R V = 0 V, I = 50 mA Note 1 90 110 Triggers DS(on) GS D z Solid state relays I V = 0 V, V = 25V Note 1 100 mA D(on) GS DS z Current regulators 2006 IXYS All rights reserved 98809B (01/06)IXTP 01N100D TO-220 AD Outline Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. g V = 50 V I = 100 mA Note1 100 150 mS fs DS D C 120 pF iss C V = -10 V, V = 25 V, f = 1 MHz 25 pF oss GS DS C 5pF rss t V = 100 V V, I = 50 mA 8 ns d(on) DS D t V = 0 V to -10 6 ns r GS t R = 30 (External) 30 ns d(off) G t 51 ns f Pins: 1 - Gate 2 - Drain 3 - Source TAB - Drain R 5 K/W thJC R TO-220 0.25 K/W thCS Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V V = -10 V, I = 100 mA Note1 1.0 1.5 V SD GS F t I = 0.75 A, -di/dt = 10 A/s, 1.5 s rr F V = 25 V, V = -10V DS GS TO-251 AA Outline Note1: Pulse test, t 300 s, duty cycle d 2 % TO-252 AA Outline Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 0.086 0.094 A1 0.89 1.14 0.035 0.045 A2 0 0.13 0 0.005 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 Pins: 1 - Gate 2 - Drain b2 5.21 5.46 0.205 0.215 3 - Source TAB - Drain c 0.46 0.58 0.018 0.023 Dim. Millimeter Inches c1 0.46 0.58 0.018 0.023 Min. Max. Min. Max. D 5.97 6.22 0.235 0.245 A 2.19 2.38 .086 .094 D1 4.32 5.21 0.170 0.205 A1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 E 6.35 6.73 0.250 0.265 b1 0.76 1.14 .030 .045 E1 4.32 5.21 0.170 0.205 b2 5.21 5.46 .205 .215 e 2.28 BSC 0.090 BSC c 0.46 0.58 .018 .023 e1 4.57 BSC 0.180 BSC c1 0.46 0.58 .018 .023 H 9.40 10.42 0.370 0.410 D 5.97 6.22 .235 .245 L 0.51 1.02 0.020 0.040 E 6.35 6.73 .250 .265 Pins: 1 - Gate 2 - Drain e 2.28 BSC .090 BSC L1 0.64 1.02 0.025 0.040 3 - Source TAB - Drain e1 4.57 BSC .180 BSC L2 0.89 1.27 0.035 0.050 H 17.02 17.78 .670 .700 L3 2.54 2.92 0.100 0.115 L 8.89 9.65 .350 .380 L1 1.91 2.28 .075 .090 L2 0.89 1.27 .035 .050 L3 1.15 1.52 .045 .060 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463