TM V = 1200V Polar IXTY02N120P DSS I = 0.2A Power MOSFET IXTP02N120P D25 R 75 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 150 C 1200 V DSS J V T = 25 C to 150 C, R = 1M 1200 V DGR J GS V Continuous 20 V GSS G D D (Tab) V Transient 30 V S GSM I T = 25 C 0.2 A D25 C I T = 25 C, Pulse Width Limited by T 0.6 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25 C 0.2 A A C E T = 25 C40mJ AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25 C33W D C Features T -55 ... +150 C J T 150 C JM International Standard Packages T -55 ... +150 C Low Q stg G Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Rectifier M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Advantages Weight TO-252 0.35 g TO-220 3.00 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode Power Supplies BV V = 0V, I = 250A 1200 V DSS GS D AC and DC Motor Drives Laser Drivers V V = V , I = 100A 2.0 4.0 V GS(th) DS GS D Igniters, RF Generators I V = 20V, V = 0V 50 nA Robotics and Servo Controls GSS GS DS I V = V , V = 0V 1 A DSS DS DSS GS T = 125C 25 A J R V = 10V, I = 0.5 I , Note 1 75 DS(on) GS D D25 2017 IXYS CORPORATION, All Rights Reserved DS100201B(8/17) IXTY02N120P IXTP02N120P Symbol Test Conditions Characteristic Values TO-252 AA Outline A E A (T = 25C, Unless Otherwise Specified) Min. Typ. Max b3 L3 c2 J 4 g V = 10V, I = 0.5 I , Note 1 0.12 0.20 S fs DS D D25 A1 H C 104 pF L4 iss 1 2 3 A2 L1 C V = 0V, V = 25V, f = 1MHz 8.6 pF L oss GS DS b2 1 - Gate c e L2 C 1.9 pF e1 e1 e1 e1 e1 e1 2,4 - Drain rss 0 3 - Source 5.55MIN OPTIONAL t 6 ns d(on) Resistive Switching Times t 10 ns 6.50MIN r V = 10V, V = 0.5 V , I = 0.5 I 4 GS DS DSS D D25 t 21 ns 6.40 d(off) R = 50 (External) G t 39 ns 2.85MIN f BOTTOM 2.28 1.25MIN VIEW LAND PATTERN RECOMMENDATION Q 4.70 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 0.37 nC gs GS DS DSS D D25 Q 3.20 nC gd R 3.8 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 0.2 A S GS TO-220 Outline A E oP A1 I Repetitive, Pulse Width Limited by T 0.8 A SM JM H1 Q V I = I , V = 0V, Note 1 1.3 V SD F S GS D2 D t 1.6 s D1 rr I = 0.2A, -di/dt = 100A/ s, F I 3.5 A E1 RM V = 100V R A2 Q 2.8 C EJECTOR RM PIN L1 L ee c 3X b e1e1 3X b2 Note 1. Pulse test, t 300 s, duty cycle, d 2%. 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537