High Voltage V = 500V IXTY02N50D DSX Power MOSFET I = 200mA IXTU02N50D D25 R 30 IXTP02N50D DS(on) D N-Channel TO-252 (IXTY) G G S S D (Tab) TO-251 (IXTU) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSX J V T = 25 C to 150 C 500 V DGX J G V Continuous 20 V GSX D S V Transient 30 V D (Tab) GSM I T = 25 C 200 mA D25 C I T = 25 C, Pulse Width Limited by T 800 mA TO-220AB (IXTP) DM C J P T = 25 C 25 W D C T = 25 C 1.1 W A T - 55 ... +150 C J T 150 C JM G D D (Tab) T - 55 ... +150 C S stg T Maximum Lead Temperature for Soldering 300 C L G = Gate D = Drain T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD S = Source Tab = Drain M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Weight TO-252 0.35 g TO-251 0.40 g Features TO-220 3.00 g Normally ON Mode International Standard Packages TM Low R HDMOS Process Symbol Test Conditions Characteristic Values DS(on) Rugged Polysilicon Gate Cell Structure (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Fast Switching Speed BV V = -10V, I = 25 A 500 V DSX GS D Advantages V V = 25V, I = 25 A - 2.5 - 5.0 V GS(off) DS D Easy to Mount I V = 20V, V = 0V 100 nA GSX GS DS Space Savings I V = V , V = -10V 10 A High Power Density DSX(off) DS DSX GS T = 125C 250A J Applications R V = 0V, I = 50mA, Note 1 20 30 DS(on) GS D Level Shifting I V = 0V, V = 25V, Note 1 250 mA D(on) GS DS Triggers Solid State Relays Current Regulators 2017 IXYS CORPORATION, All Rights Reserved DS98861C(5/17) IXTY02N50D IXTU02N50D IXTP02N50D Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 50V, I = 200mA, Note 1 100 150 mS fs DS D C 120 pF iss C V = -10V, V = 25V, f = 1MHz 25 pF oss GS DS C 5 pF rss t 9 ns d(on) Resistive Switching Times t 4 ns r V = 5V, V = 100V, I = 50mA GS DS D t 28 ns d(off) R = 30 (External) G t 45 ns f R 5.0 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 200mA, V = -10V, Note 1 0.7 1.5 V SD F GS I = 750mA, -di/dt = 100A/ s t F 1.0 s rr V = 25V, V = -10V R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537