V = 1000V High Voltage MOSFET IXTP05N100M DSS I = 700mA D25 R 17 (Electrically Isolated Tab) DS(on) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 (IXTP...M) OUTLINE Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1 M 1000 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM Isolated Tab G I T = 25C 700 mA D D25 C S I T = 25C, pulse width limited by T 3 A DM C JM I T = 25C 1 A A C G = Gate D = Drain E T = 25C 100 mJ AS C S = Source dv/dt I I , V V , T =150C 3 V/ns S DM DD DSS J P T = 25C 25 W D C T - 55 ... +150 C J T 150 C Features JM T - 55 ... +150 C stg Plastic overmolded tab for electrical T 1.6 mm (0.062 in.) from case for 10 s 300 C L isolation T Plastic body for 10 s 260 C SOLD International standard package M Mounting torque 1.13/10 Nm/lb.in. Avalanche rated d Low package inductance Weight 2.5 g - easy to drive and to protect Advantages Symbol Test Conditions Characteristic Values Easy to mount (T = 25C, unless otherwise specified) Min. Typ. Max. J Space savings High power density BV V = 0V, I = 250A 1000 V DSS GS D V V = V , I = 25A 2.5 4.5 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V 25 A DSS DS DSS V = 0V T = 125C 500 A GS J R V = 10V, I = 375mA, Note 1 15 17 DS(on) GS D 2008 IXYS CORPORATION, All rights reserved DS100014A(08/08)IXTP05N100M Symbol Test Conditions Characteristic Values ISOLATED TO-220 (IXTP...M) (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20V, I = 500mA, Note 1 0.55 0.93 S fs DS D C 260 pF iss C V = 0V, V = 25V, f = 1MHz 22 pF oss GS DS C 8 pF rss 12 3 t Resistive Switching Times 11 ns d(on) t V = 10V, V = 0.5 V , I = 1A 19 ns r GS DS DSS D t R = 47 (External) 40 ns d(off) G t 28 ns f Q 7.8 nC g(on) Q V = 10V, V = 0.5 V , I = 1A 1.4 nC gs GS DS DSS D Q 4.1 nC gd Terminals: 1 - Gate R 5.0 C/W 2 - Drain (Collector) thJC 3 - Source (Emitter) Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0V 750 mA S GS I Repetitive, pulse width limited by T 3 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 750mA, -di/dt = 100A/s, t 710 ns F rr V = 100V, V = 0V R GS Notes:1. Pulse test, t 300 s duty cycle, d 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537