TM Polar V = 1200V IXTA06N120P DSS Power MOSFET I = 0.6A IXTP06N120P D25 R 34 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 150 C 1200 V DSS J V T = 25 C to 150 C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25 C 0.6 A S D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 1.2 A DM C JM G = Gate D = Drain I T = 25 C 0.6 A S = Source Tab = Drain A C E T = 25 C50 mJ AS C dV/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C42W D C Features T -55 ... +150 C J T 150 C JM International Standard Packages T -55 ... +150 C stg Low Q G T Maximum Lead Temperature for Soldering 300 C Avalanche Rated L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Rectifier F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Advantages Weight TO-263 2.5 g High Power Density TO-220 3.0 g Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J DC-DC Converters BV V = 0V, I = 250 A 1200 V DSS GS D Switch-Mode and Resonant-Mode Power Supplies V V = V , I = 50A 2.0 4.0 V GS(th) DS GS D AC and DC Motor Drives I V = 30V, V = 0V 50 nA Discharge Circiuts in Lasers, Spark GSS GS DS Igniters, RF Generators I V = V , V = 0V 3 A DSS DS DSS GS High Voltage Pulse Power T = 125C 125A Applications J R V = 10V, I = 0.5 I , Note 1 27 34 DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS99872E(6/18) IXTA06N120P IXTP06N120P Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25C, Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 g V = 30V, I = 0.5 I , Note 1 0.28 0.45 S fs DS D D25 L1 D1 D 4 C 236 pF L2 H A1 iss 1 2 3 C V = 0V, V = 25V, f = 1MHz 15 pF oss GS DS b2 b L3 C 3.2 pF rss e e c 0.43 11.0 0 t Resistive Switching Times 19 ns d(on) 0.34 8.7 t 37 ns r 0.66 16.6 V = 10V, V = 0.5 V , I = 0.5 I , A2 GS DS DSS D D25 t 35 ns d(off) 1 - Gate 0.20 5.0 0.12 3.0 t 34 ns R = 50 (External) f G 2,4 - Drain 3 - Source 0.10 2.5 0.06 1.6 Q 13.3 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 2.4 nC gs GS DS DSS D D25 Q 7.8 nC gd R 3.0 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 0.6 A S GS I Repetitive, Pulse Width Limited by T 1.8 A SM JM TO-220 Outline V I = I , V = 0V, Note 1 1.5 V A SD F S GS E oP A1 t I = 0.6A, -di/dt = 100A/ s 900 ns rr F H1 Q V = 100V, V = 0V R GS D2 D D1 E1 A2 EJECTOR PIN L1 L Note: 1. Pulse test, t 300 s, duty cycle, d 2%. ee c 3X b e1e1 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537