TM IXTA08N120P V = 1200V Polar DSS IXTP08N120P I = 0.8A D25 Power MOSFET R 25 DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 1200 V DSS J TO-220 (IXTP) V T = 25 C to 150 C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G I T = 25 C 0.8 A D25 C D S I T = 25 C, pulse width limited by T 1.8 A D (Tab) DM C JM I T = 25 C 0.8 A G = Gate D = Drain A C E T = 25 C80mJ S = Source Tab = Drain AS C dV/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C50W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Low Q G T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Avalanche Rated Low Package Inductance F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Fast Intrinsic Rectifier M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g Advantages TO-220 3.0 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J DC-DC Converters BV V = 0V, I = 250A 1200 V DSS GS D Switch-Mode and Resonant-Mode Power Supplies V V = V , I = 100A 2.5 4.5 V GS(th) DS GS D AC and DC Motor Drives Discharge Circiuts in Lasers, Spark I V = 30V, V = 0V 50 nA GSS GS DS Igniters, RF Generators I V = V , V = 0V 5 A High Voltage Pulse Power DSS DS DSS GS T = 125C 100 A Applications J R V = 10V, I = 0.5 I , Note 1 20.5 25.0 DS(on) GS D D25 2018 IXYS CORPORATION, All rights reserved DS99868B(06/18)IXTA08N120P IXTP08N120P Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25C, Unless Otherwise Specified) Min. Typ. Max E E1 J C2 g V = 30V, I = 0.5 I , Note 1 0.38 0.63 S L1 fs DS D D25 D1 D 4 L2 H C 333 pF A1 iss 1 2 3 C V = 0V, V = 25V, f = 1MHz 20 pF oss GS DS b2 b L3 e e c C 4.7 pF 0.43 11.0 rss 0 Q 14.0 nC 0.34 8.7 g(on) 0.66 16.6 A2 Q V = 10V, V = 0.5 V , I = 0.5 I 2.0 nC gs GS DS DSS D D25 1 - Gate 0.20 5.0 0.12 3.0 Q 8.2 nC 2,4 - Drain gd 3 - Source 0.10 2.5 0.06 1.6 t 20 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 55 ns d(off) R = 50 (External) G t 24 ns f R 2.5 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 0.8 A S GS TO-220 Outline E A oP A1 I Repetitive, Pulse Width Limited by T 2.4 A SM JM H1 Q V I = I , V = 0V, Note 1 1.5 V SD F S GS D2 D t I = 0.8A, -di/dt = 100A/ s, V = 100V 900 ns D1 rr F R E1 A2 EJECTOR PIN L1 L Note: 1. Pulse test, t 300 s, duty cycle, d 2%. ee c 3X b e1e1 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537