TM TrenchP V = - 65V IXTA120P065T DSS I = - 120A Power MOSFETs IXTP120P065T D25 R 10m DS(on) IXTH120P065T P-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25C to 150C - 65 V DSS J V T = 25C to 150C, R = 1M - 65 V DGR J GS V Continuous 15 V GSS G D D (Tab) S V Transient 25 V GSM TO-247 (IXTH) I T = 25C - 120 A D25 C I T = 25C, Pulse Width Limited by T - 360 A DM C JM I T = 25C - 60 A A C E T = 25C1J AS C G P T = 25C 298 W D C D D (Tab) S T -55 ... +150 C J T 150 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source Tab = Drain T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C Features SOLD M Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in. d z International Standard Packages Weight TO-263 2.5 g z Avalanche Rated TO-220 3.0 g z Extended FBSOA TO-247 6.0 g z Fast Intrinsic Diode z Low R and Q DS(ON) G Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J z High Power Density BV V = 0V, I = - 250A - 65 V DSS GS D Applications V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D I V = 15V, V = 0V 100 nA z GSS GS DS High-Side Switching z Push Pull Amplifiers I V = V , V = 0V - 10 A DSS DS DSS GS z DC Choppers T = 125C - 750 A J z Automatic Test Equipment R V = -10V, I = 0.5 I , Note 1 10 m z DS(on) GS D D25 Current Regulators z Battery Charger Applications 2013 IXYS CORPORATION, All Rights Reserved DS100026B(01/13) IXTA120P065T IXTH120P065T IXTP120P065T Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 45 75 S fs DS D D25 C 13.2 nF iss C V = 0V, V = - 25V, f = 1MHz 1345 pF oss GS DS C 505 pF rss t 31 ns d(on) Resistive Switching Times t 28 ns r = -10V, V = - 33V, I = - 50A V GS DS D t 38 ns d(off) R = 1 (External) G t 21 ns f Q 185 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 55 nC gs GS DS DSS D D25 1 = Gate 2 = Drain Q 58 nC 3 = Source gd R 0.42 C/W thJC R (TO-220) 0.50 C/W thCS (TO-247) 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 120 A S GS I Repetitive, Pulse Width Limited by T - 480 A SM JM V I = - 60A, V = 0V, Note 1 -1.3 V SD F GS TO-220 Outline t 53 ns rr I = - 60A, -di/dt = -100A/s F Q 77 nC RM V = - 33V, V = 0V R GS I - 2.9 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 Pins: 1 - Gate 2 - Drain b 0.51 0.99 .020 .039 3 - Source 4 - Drain b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 1. Gate e 2.54 BSC .100 BSC 2. Drain L 14.61 15.88 .575 .625 3. Source L1 2.29 2.79 .090 .110 4. Drain L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537