TM Polar V = 500V IXTA12N50P DSS Power MOSFET I = 12A IXTP12N50P D25 R 500m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) Fast Intrinsic Rectifier G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS TO-220AB (IXTP) V Continuous 30 V GSS V Transient 40 V GSM I T = 25C12 A D25 C I T = 25C, Pulse Width Limited by T 30 A G DM C JM D D (Tab) S I T = 25C12 A A C E T = 25C 600 mJ AS C G = Gate D = Drain dv/dt I I , V V , T 150C 10 V/ns S = Source Tab = Drain S DM DD DSS J P T = 25C 200 W D C T -55 ... +150 C J Features T 150 C JM z T -55 ... +150 C International Standard Packages stg z Dynamic dv/dt Rating T 1.6mm (0.062in.) from Case for 10s 300 C L z Avalanche Rated T Plastic Body for 10 Seconds 260 C sold z Fast Intrinsic Rectifier M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d z Low Q G z Weight TO-263 2.5 g Low R DS(on) TO-220 3.0 g z Low Drain-to-Tab Capacitance z Low Package Inductance Advantages Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Space Savings BV V = 0V, I = 250A 500 V DSS GS D Applications V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D z I V = 30V, V = 0V 100 nA DC-DC Converters GSS GS DS z Battery Chargers I V = V , V = 0V 5 A DSS DS DSS GS z Switch-Mode and Resonant-Mode T = 125C 250 A J Power Supplies z R V = 10V, I = 0.5 I , Notes 1, 2 500 m Uninterrupted Power Supplies DS(on) GS D D25 z AC Motor Drives z High Speed Power Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS99322G(04/10)IXTA12N50P IXTP12N50P Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 7.5 13 S fs DS D D25 C 1830 pF iss C V = 0V, V = 25V, f = 1MHz 182 pF oss GS DS C 16 pF rss t 22 ns d(on) Resistive Switching Time t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 65 ns R = 10 (External) d(off) G t 20 ns f Q 29 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 11 nC gs GS DS DSS D D25 Q 10 nC gd R 0.62 C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 12 A S GS I Repetitive, Pulse Width Limited by T 48 A SM JM TO-220 Outline V I = I , V = 0V, Note 1 1.5 V F S GS SD t 300 ns rr I = 6A, -di/dt = 150A/s, F Q 2.8 C RM V = 100V, V = 0V R GS I 18.2 A RM Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537