TM PolarHT V = 500V IXTA16N50P DSS Power MOSFET I = 16A IXTP16N50P D25 R 400m DS(on) IXTQ16N50P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J TO-220 (IXTP) V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C 16 A D25 C G (TAB) D S I T = 25C, Pulse Width Limited by T 35 A DM C JM I T = 25C 16 A TO-3P (IXTQ) A C E T = 25C 750 mJ AS C dV/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 300 W D C G T - 55 ... +150 C J D (TAB) T 150 C S JM T - 55 ... +150 C stg G = Gate D = Drain T 1.6mm (0.062 in.) from Case for 10s 300 C L S = Source TAB = Drain T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-3P,TO-220) 1.13/10 Nm/lb.in. d Features Weight TO-263 2.5 g TO-220 3.0 g z International Standard Packages TO-3P 5.5 g z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance Symbol Test Conditions Characteristic Values Advantages (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z BV V = 0V, I = 250A 500 V High Power Density DSS GS D z Easy to Mount V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D z Space Savings I V = 30V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J z Switched-Mode and Resonant-Mode R V = 10V, I = 0.5 I , Note 1 400 m Power Supplies DS(on) GS D D25 z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls 2009 IXYS CORPORATION, All Rights Reserved DS99323F(05/09) IXTA16N50P IXTP16N50P IXTQ16N50P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 9 16 S fs DS D D25 C 2480 pF iss C V = 0V, V = 25V, f = 1MHz 237 pF oss GS DS C 18 pF rss t 23 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 70 ns d(off) R = 10 (External) G t 22 ns f Q 43 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 15 nC gs GS DS DSS D D25 Q 12 nC gd R 0.42 C/W thJC R (TO-3P) 0.25 C/W thCS (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 16 A TO-220 (IXTP) Outline S GS I Repetitive, Pulse Width Limited by T 64 A SM JM V I = 16A, V = 0V, Note 1 1.5 V SD F GS I = 16A, -di/dt = 100A/s t 400 ns F rr V = 100V, V = 0V R GS Note 1: Pulse Test, t 300s Duty Cycle, d 2%. TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537