Preliminary Technical Information TM IXTA182N055T V =55 V TrenchMV DSS IXTP182N055T I = 182 A D25 Power MOSFET R 5.0 m DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) V T = 25 C to 175C55V DSS J V T = 25 C to 175 C R = 1 M 55 V DGR J GS G V Transient 20 V S GSM (TAB) I T = 25C 182 A D25 C I Lead Current Limit, RMS 75 A LRMS TO-220 (IXTP) I T = 25C, pulse width limited by T 490 A DM C JM I T = 25C25A AR C E T = 25 C 1.0 J AS C dv/dt I I , di/dt 100 A/s, V V 3 V/ns S DM DD DSS G (TAB) D T 175C, R = 5 S J G P T = 25C 360 W D C G = Gate D = Drain S = Source TAB = Drain T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Features T 1.6 mm (0.062 in.) from case for 10 s 300 C L Ultra-low On Resistance T Plastic body for 10 seconds 260 C SOLD Unclamped Inductive Switching (UIS) rated M Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. d Low package inductance - easy to drive and to protect Weight TO-263 2.5 g 175 C Operating Temperature TO-220 3.0 g Advantages Easy to mount Space savings High power density Symbol Test Conditions Characteristic Values (T = 25 C unless otherwise specified) Min. Typ. Max. J Applications BV V = 0 V, I = 250 A55 V DSS GS D Automotive - Motor Drives V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D - High Side Switch - 12V Battery I V = 20 V, V = 0 V 200 nA GSS GS DS - ABS Systems I V = V 5 A DC/DC Converters and Off-line UPS DSS DS DSS V = 0 V T = 150C 250 A Primary- Side Switch GS J High Current Switching R V = 10 V, I = 25 A, Notes 1, 2 3.8 5.0 m DS(on) GS D Applications DS99626 (11/06) 2006 IXYS CORPORATION All rights reservedIXTA182N055T IXTP182N055T Symbol Test Conditions Characteristic Values TO-263AA (IXTA) Outline (T = 25 C unless otherwise specified) Min. Typ. Max. J g V = 10 V I =60 A, Note 1 65 100 S fs DS D C 4850 pF iss C V = 0 V, V = 25 V, f = 1 MHz 954 pF oss GS DS C 212 pF rss t Resistive Switching Times 36 ns d(on) t V = 10 V, V = 30 V, I = 25 A 35 ns r GS DS D t R = 5 (External) 53 ns d(off) G Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain t 38 ns f Q 114 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 10 V, V = 0.5 V , I = 25 A 30 nC gs GS DS DSS D A 4.06 4.83 .160 .190 Q 32 nC A1 2.03 2.79 .080 .110 gd b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 R 0.42C/W thJC c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 R TO-220 0.50 C/W thCS D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 Source-Drain Diode e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 Symbol Test Conditions Characteristic Values L1 2.29 2.79 .090 .110 T = 25 C unless otherwise specified) Min. Typ. Max. J L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 I V = 0 V 182 A S GS R 0.46 0.74 .018 .029 I Pulse width limited by T 490 A SM JM TO-220AB (IXTP) Outline V I = 25 A, V = 0 V, Note 1 1.0 V SD F GS t I = 25 A, -di/dt = 100 A/s70ns rr F V = 25 V, V = 0 V R GS Notes: 1. Pulse test, t 300 s, duty cycle d 2 % 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5 mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre- production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537