TM TrenchP IXTA24P085T V = - 85V DSS IXTP24P085T I = - 24A Power MOSFETs D25 R 65m DS(on) P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25C to 150C - 85 V DSS J V T = 25C to 150C, R = 1M - 85 V TO-220AB (IXTP) DGR J GS V Continuous 15 V GSS V Transient 25 V GSM I T = 25C - 24 A D25 C G I T = 25C, Pulse Width Limited by T - 80 A D D (Tab) DM C JM S I T = 25C - 24 A A C G = Gate D = Drain E T = 25C 200 mJ AS C S = Source Tab = Drain P T = 25C83W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg z International Standard Packages T 1.6mm (0.062 in.) from Case for 10s 300 C L z Avalanche Rated T Plastic Body for 10s 260 C SOLD z Extended FBSOA M Mounting Torque (TO-220) 1.13/10 Nm/lb.in. d z Fast Intrinsic Diode z Weight TO-220 3.0 g Low R and Q DS(ON) G TO-263 2.5 g Advantages z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z High-Side Switching BV V = 0V, I = - 250A - 85 V DSS GS D z Push Pull Amplifiers V V = V , I = - 250A - 2.5 - 4.5 V z GS(th) DS GS D DC Choppers z Automatic Test Equipment I V = 15V, V = 0V 50 nA GSS GS DS z Current Regulators I V = V , V = 0V - 3 A z DSS DS DSS GS Battery Charger Applications T = 125C -100 A J R V = -10V, I = 0.5 I , Note 1 65 m DS(on) GS D D25 2013 IXYS CORPORATION, All Rights Reserved DS99969B(01/13)IXTA24P085T IXTP24P085T Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 10 16 S fs DS D D25 C 2090 pF iss C V = 0V, V = - 25V, f = 1MHz 243 pF oss GS DS C 117 pF rss t 18 ns d(on) Resistive Switching Times t 26 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 Pins: t 53 ns d(off) 1 - Gate R = 10 (External) G t 26 ns 2,4 - Drain f 3 - Source Q 41 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 11 nC gd R 1.5 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 24 A S GS I Repetitive, Pulse Width Limited by T - 96 A SM JM TO-220 Outline V I = - 24A, V = 0V, Note 1 -1.5 V SD F GS t 40 ns rr I = -12A, -di/dt = -100A/s F Q 72 nC RM V = - 43V, V = 0V R GS I - 3.6 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537