TM TrenchT2 V = 55V IXTA260N055T2 DSS I = 260A Power MOSFET IXTP260N055T2 D25 R 3.3m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C55 V DSS J V T = 25 C to 175 C, R = 1M 55 V DGR J GS V Transient 20 V G GSM D S I T = 25 C 260 A D25 C D (Tab) I External Lead Current Limit 120 A L(RMS) I T = 25 C, Pulse Width Limited by T 780 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25 C 100 A A C E T = 25 C 600 mJ AS C P T = 25 C 480 W Features D C T -55 ... +175 C J International Standard Packages T 175 C JM Avalanche Rated T -55 ... +175 C stg Low Package Inductance Fast Intrinsic Rectifier T Maximum Lead Temperature for Soldering 300 C L 175C Operating Temperature T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Current Handling Capability F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb ROHS Compliant C M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d High Performance Trench Weight TO-263 2.5 g Technology for extremely low R DS(on) TO-220 3.0 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250 A 55 V DSS GS D V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Automotive Engine Control Synchronous Buck Converter I V = 20V, V = 0V 200 nA GSS GS DS (for Notebook SystemPower & I V = V , V = 0V 5 A DSS DS DSS GS General Purpose Point & Load) T = 150C 150 A DC/DC Converters J High Current Switching Applications R V = 10V, I = 50A, Notes 1 & 2 3.3 m DS(on) GS D Power Train Management Distributed Power Architecture 2018 IXYS CORPORATION, All Rights Reserved DS100028B(7/18) IXTA260N055T2 IXTP260N055T2 Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 g V = 10V, I = 60A, Note 1 55 94 S L1 D1 fs DS D D 4 L2 H C 10.8 nF A1 1 2 3 iss C V = 0V, V = 25V, f = 1MHz 1460 pF b2 b oss GS DS L3 e e c 0.43 11.0 C 215 pF rss 0 0.34 8.7 t 20 ns d(on) Resistive Switching Times 0.66 16.6 A2 t 27 ns r V = 10V, V = 28V, I = 100A 1 - Gate 0.20 5.0 60.12 3.0 GS DS D t 36 ns 2,4 - Drain d(off) R = 2 (External) 3 - Source G 0.10 2.5 0.06 1.6 t 24 ns f Q 140 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 52 nC gs GS DS DSS D DSS Q 32 nC gd R 0.31 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 260 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 1000 A SM JM E A oP A1 V I = 100A, V = 0V, Note 1 1.3 V SD F GS H1 Q t 60 ns rr D2 D I = 130A, V = 0V, F GS I 3.4 A D1 RM -di/dt = 100A/s, V = 27V R E1 Q 102 nC RM A2 EJECTOR PIN L1 L ee c 3X b e1e1 Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 3X b2 1 - Gate 2. On through-hole packages, R Kelvin test contact DS(on) 2,4 - Drain 3 - Source location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537