TM Polar V = 1000V IXTA3N100P DSS Power MOSFET I = 3A IXTP3N100P D25 R 4.8 DS(on) IXTH3N100P N-Channel Enhancement Mode TO-263 (IXTA) Avalanche Rated G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSS J V T = 25 C to 150 C, R = 1M 1000 V DGR J GS V Continuous 20 V GSS G D V Transient 30 V GSM S D (Tab) I T = 25 C3A D25 C TO-247 (IXTH) I T = 25 C, Pulse Width Limited by T 6A DM C JM I T = 25 C3A A C E T = 25 C 200 mJ AS C dv/dt I I , V V , T 150C 10 V/ns G S DM DD DSS J D D (Tab) S P T = 25 C 125 W D C T -55 ... +150 C G = Gate D = Drain J S = Source Tab = Drain T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C Features SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in International Standard Packages d Low R and Q DS(ON) G Weight TO-263 2.5 g Avalanche Rated TO-220 3.0 g Low Package Inductance TO-247 6.0 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 1000 V DSS GS D V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 50 nA GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 5 A DSS DS DSS GS DC-DC Converters T = 125C 250 A J Laser Drivers R V = 10V, I = 0.5 I , Note 1 4.8 AC and DC Motor Drives DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS99767B(6/18)IXTA3N100P IXTP3N100P IXTH3N100P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 1.5 2.4 S fs DS D D25 C 1100 pF iss C V = 0V, V = 25V, f = 1MHz 70 pF oss GS DS C 14.5 pF rss t 22 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 75 ns d(off) R = 18 (External) G t 29 ns f Q 36 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 9 nC gs GS DS DSS D D25 Q 13 nC gd R 1.0 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 3 A S GS I Repetitive, pulse Width Limited by T 9 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 3A, -di/dt = 100A/ s t F 820 ns rr V = 100V R Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537