TM IXTA 42N25P V = 250 V PolarHT DSS IXTP 42N25P I = 42 A Power MOSFET D25 IXTQ 42N25P R 84 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 250 V S DSS J V T = 25 C to 150 C R = 1 M 250 V (TAB) DGR J GS V Continuous 20 V GS TO-220 (IXTP) V Transient 30 V GSM I T = 25C42A D25 C I T = 25 C, pulse width limited by T 110 A DM C JM I T = 25C42A AR C (TAB) G D S E T = 25C30mJ AR C E T = 25 C 1.0 J AS C TO-3P (IXTQ) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 10 J G P T = 25 C 300 W D C T -55 ... +150 C J G T 150 C JM D (TAB) S T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C G = Gate D = Drain SOLD S = Source TAB = Drain M Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in. d Weight TO-3P 5.5 g TO-220 4 g Features TO-263 3 g l International standard packages l Unclamped Inductive Switching (UIS) rated Symbol Test Conditions Characteristic Values l Low package inductance (T = 25 C, unless otherwise specified) Min. Typ. Max. J - easy to drive and to protect BV V = 0 V, I = 250 A 250 V DSS GS D V V = V , I = 250A 3.0 5.5 V Advantages GS(th) DS GS D I V = 20 V , V = 0 100 nA l GSS GS DC DS Easy to mount l Space savings I V = V 25 A DSS DS DSS l High power density V = 0 V T = 125 C 250 A GS J R V = 10 V, I = 0.5 I 84 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99157E(12/05) 2006 IXYS All rights reserved IXTA 42N25P IXTP 42N25P IXTQ 42N25P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 12 20 S fs DS D D25 C 2300 pF iss C V = 0 V, V = 25 V, f = 1 MHz 430 pF oss GS DS C 115 pF rss t 24 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 28 ns r GS DS DSS D D25 t R = 10 (External) 81 ns d(off) G t 30 ns f Q 70 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 37 nC gd R 0.42C/W thJC R (TO-3P) 0.21 C/W thCS (TO-220) 0.25 C/W Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 42 A S GS I Repetitive 110 A TO-220 (IXTP) Outline SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A 200 ns rr F -di/dt = 100 A/s Q V = 100 V 2.0 C RM R TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2