X-On Electronics has gained recognition as a prominent supplier of IXTP44N10T MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTP44N10T MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTP44N10T IXYS

IXTP44N10T electronic component of IXYS
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Part No.IXTP44N10T
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 44 Amps 100V 25.0 Rds
Datasheet: IXTP44N10T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.876 ea
Line Total: USD 1.88 
Availability - 216
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
216
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.876
3 : USD 1.708
10 : USD 1.498
13 : USD 1.344
36 : USD 1.274

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXTP44N10T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTP44N10T and other electronic components in the MOSFETs category and beyond.

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TM Trench V = 100V IXTY44N10T DSS Power MOSFET I = 44A IXTP44N10T D25 R 30m DS(on) N-Channel Enhancement Mode TO-252 Avalanche Rated (IXTY) G S D (Tab) TO-220 Symbol Test Conditions Maximum Ratings (IXTP) V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C, R = 1M 100 V DGR J GS V Continuous 20 V GSS G D V Transient 30 V GSM S D (Tab) I T = 25 C44 A D25 C I Lead Current Limit, (RMS) (TO-252) 25 A LRMS I T = 25 C, Pulse Width Limited by T 110 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25 C10 A A C E T = 25 C 250 mJ AS C dv/dt I I , V V ,T 175 C 12 V/ns S DM DD DSS J Features P T = 25 C 130 W D C International Standard Packages T -55 ... +175 C J 175C Operating Temperature T 175 C JM Avalanche Rated T -55 ... +175 C stg Low R DS(on) T Maximum Lead Temperature for Soldering 300 C High Current Handling Capability L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Advantages Weight TO-252 0.35 g Easy to Mount TO-220 3.00 g Space Savings High Power Density Symbol Test Conditions Characteristic Values Applications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Automotive BV V = 0V, I = 250 A 100 V DSS GS D - Motor Drives - 24 / 48V Power Bus V V = V , I = 25A 2.5 4.5 V GS(th) DS GS D - ABS Systems I V = 20V, V = 0V 100 nA GSS GS DS DC/DC Converters and Off-Line UPS Primary- Side Switch I V = V , V = 0V 1 A DSS DS DSS GS High Current Switching Applications T = 150C 200A J R V = 10V, I = 0.5 I , Notes 1, 2 30 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS99646B(11/18)IXTY44N10T IXTP44N10T Symbol Test Conditions Characteristic Values TO-252 AA Outline E AA (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J b3 L3 c2 4 g V = 10V, I = 0.5 I , Note 1 13 21 S fs DS D D25 A1 H L4 1 2 3 A2 C 1567 pF iss L1 L C V = 0V, V = 25V, f = 1MHz 200 pF oss GS DS b2 1 - Gate c e L2 e1 2,4 - Drain e1 e1 e1 e1 e1 C 47 pF 0 rss 3 - Source 5.55MIN OPTIONAL t 21 ns d(on) Resistive Switching Times 6.50MIN 4 t 47 ns r V = 10V, V = 0.5 V , I = 10A 6.40 GS DS DSS D t 36 ns d(off) 2.85MIN R = 18 (External) BOTTOM G 2.28 1.25MIN VIEW t 32 ns LAND PATTERN RECOMMENDATION f Q 27.4 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 8.8 nC gs GS DS DSS D D25 Q 9.0 nC gd R 1.15C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 44 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 140 A SM JM A E oP A1 V I = 22A, V = 0V, Note 1 1.1 V F GS SD H1 Q t 60 ns rr I = 0.5 I , V = 0V F D25 GS D2 D I 4.8 A -di/dt = 100A/ s RM D1 V = 50V Q R 144 nC E1 RM A2 EJECTOR PIN L1 L ee c 3X b e1e1 3X b2 1 - Gate 2,4 - Drain Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 3 - Source 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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IXYS Integrated Circuits / Clare
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