TM Trench IXTA48N20T V = 200V DSS IXTP48N20T I = 48A Power MOSFET D25 IXTQ48N20T R 50m DS(on) N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 200 V DSS J V T = 25C to 175C, R = 1M 200 V DGR J GS V Transient 30 V GSM I T = 25C48 A G D25 C D D (Tab) S I T = 25C, Pulse Width Limited by T 130 A DM C JM I T = 25C5 A TO-3P (IXTQ) A C E T = 25C 500 mJ AS C dv/dt I I , V V ,T 175C 3 V/ns S DM DD DSS J G P T = 25C 250 W D C D S T -55 ... +175 C D (Tab) J T 175 C JM T -55 ... +175 C G = Gate D = Drain stg S = Source Tab = Drain T 1.6mm (0.062in.) from Case for 10s 300 C L T Plastic Body for 10 seconds 260 C SOLD Features F Mounting Force (TO-263) 10..65/2.2..14.6 Nm/lb.in C M Mounting Torque (TO-220 & TO-3P) 1.13/10 Nm/lb.in d z High Current Handling Capability Weight TO-263 2.5 g z Avalanche Rated TO-220 3.0 g z Fast Intrinsic Rectifier TO-3P 5.5 g z Low R DS(on) Advantages Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J z Space Savings BV V = 0V, I = 250A 200 V DSS GS D z High Power Density V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A z DSS DS DSS GS DC-DC Converters T = 150C 250 A z J Battery Chargers z Switch-Mode and Resonant-Mode R V = 10V, I = 0.5 I , Note 1 40 50 m DS(on) GS D D25 Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS99948A(02/10)IXTA48N20T IXTP48N20T IXTQ48N20T Symbol Test Conditions Characteristic Values TO-220 (IXTP) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 26 44 S fs DS D D25 C 3090 pF iss C V = 0V, V = 25V, f = 1MHz 350 pF oss GS DS C 40 pF rss t 20 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 46 ns d(off) R = 10(External) G t 28 ns f Q 60 nC Pins: 1 - Gate 2 - Drain g(on) 3 - Source Q V = 10V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 13 nC gd R 0.50 C/W thJC R TO-220 0.50 C/W thCS R TO-3P 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 48 A S GS I Repetitive, Pulse Width Limited by T 192 A SM JM TO-3P (IXTQ) Outline V I = 48A, V = 0V, Note 1 1.2 V F GS SD t 130 ns I = 0.5 I , V = 0V rr F D25 GS I 8.5 A -di/dt = 100A/s RM V = 0.5 V Q R DSS 550 nC RM Note: 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 1. Gate e 2.54 BSC .100 BSC 2. Collector L 14.61 15.88 .575 .625 3. Emitter L1 2.29 2.79 .090 .110 4. Collector L2 1.02 1.40 .040 .055 Bottom Side L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537