TM Trench V = 200V IXTA60N20T DSS Power MOSFET I = 60A IXTP60N20T D25 R 40m DS(on) IXTQ60N20T TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers G Avalanche Rated S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 200 V DSS J V T = 25C to 175C, R = 1M 200 V DGR J GS G V Continuous 20 V D GSS D (Tab) S V Transient 30 V GSM TO-3P (IXTQ) I T = 25C60 A D25 C I T = 25C, Pulse Width Limited by T 150 A DM C JM I T = 25C30 A A C G D E T = 25C 700 mJ AS C S D (Tab) P T = 25C 500 W D C G = Gate D = Drain T -55 ... +175 C J S = Source Tab = Drain T 175 C JM T -55 ... +175 C stg Features T 1.6mm (0.062in.) from Case for 10s 300 C L z High Current Handling Capability T Plastic Body for 10 Seconds 260 C sold z 175C Operating Temperature M Mounting Torque (TO-220 &TO-3P) 1.13 / 10 Nm/lb.in. d z Avalanche Rated z Weight TO-263 2.5 g Fast Intrinsic Rectifier TO-220 3.0 g z Low R DS(on) TO-3P 5.5 g Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z (T = 25C Unless Otherwise Specified) Min. Typ. Max. Space Savings J z High Power Density BV V = 0V, I = 250A 200 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D I V = 20V, V = 0V 200 nA z GSS GS DS DC-DC Converters z I V = V , V = 0V 1 A Battery Chargers DSS DS DSS GS z Switch-Mode and Resonant-Mode T = 150C 250 A J Power Supplies z R V = 10V, I = 0.5 I , Note 1 32 40 m DC Choppers DS(on) GS D D25 z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS99359B(7/10)IXTA60N20T IXTP60N20T IXTQ60N20T Symbol Test Conditions Characteristic Values TO-220 (IXTP) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 40 62 S fs DS D D25 C 4530 pF iss C V = 0V, V = 25V, f = 1MHz 490 pF oss GS DS C 72 pF rss t 22 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 33 ns R = 10 (External) d(off) G t 22 ns f Q 73 nC Pins: 1 - Gate 2 - Drain g(on) 3 - Source Q V = 10V, V = 0.5 V , I = 0.5 I 22 nC gs GS DS DSS D D25 Q 22 nC gd R 0.30 C/W thJC R TO-220 0.50 C/W thCS R TO-3P 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 60 A S GS I Repetitive, Pulse Width Limited by T 240 A SM JM V I = 60A, V = 0V, Note 1 1.3 V TO-3P (IXTQ) Outline F GS SD t 118 ns rr I = 0.5 I , V = 0V F D25 GS I 9.3 A RM -di/dt = 100A/s V = 85V Q 550 nC R RM Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 E 9.65 10.41 .380 .405 E1 6.22 8.13 .270 .320 1. Gate e 2.54 BSC .100 BSC 2. Collector L 14.61 15.88 .575 .625 3. Emitter L1 2.29 2.79 .090 .110 4. Collector L2 1.02 1.40 .040 .055 Bottom Side L3 1.27 1.78 .050 .070 L4 0 0.13 0 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537