TM IXTA 62N15P V = 150 V PolarHT DSS IXTP 62N15P I = 62 A D25 Power MOSFET IXTQ 62N15P R 40 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 150 V G DSS J S V T = 25 C to 175 C R = 1 M 150 V DGR J GS (TAB) V Continuous 20 V GS V Transient 30 V GSM TO-220 (IXTP) I T = 25C62A D25 C I T = 25 C, pulse width limited by T 150 A DM C JM I T = 25C50A AR C (TAB) G E T = 25C30mJ D AR C S E T = 25 C 1.0 J AS C TO-3P (IXTQ) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 10 J G P T = 25 C 350 W D C G T -55 ... +175 C J D (TAB) T 175 C S JM T -55 ... +150 C stg G = Gate D = Drain T 1.6 mm (0.062 in.) from case for 10 s 300 C L S = Source TAB = Drain T Plastic body for 10 s 2600 C SOLD Md Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in. Weight TO-3P 5.5 g TO-220 4 g TO-263 3 g Features l International standard packages l Symbol Test Conditions Characteristic Values Unclamped Inductive Switching (UIS) (T = 25 C, unless otherwise specified) Min. Typ. Max. rated J l Low package inductance BV V = 0 V, I = 250 A 150 V DSS GS D - easy to drive and to protect V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D I V = 20 V , V = 0 100 nA Advantages GSS GS DC DS I V = V 25 A l DSS DS DSS Easy to mount V = 0 V T = 150 C 250 A l GS J Space savings l High power density R V = 10 V, I = 0.5 I 33 40 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99154E(12/05) 2006 IXYS All rights reserved IXTA 62N15P IXTP 62N15P IXTQ 62N15P Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 14 24 S fs DS D D25 C 2250 pF iss C V = 0 V, V = 25 V, f = 1 MHz 660 pF oss GS DS C 185 pF rss t 27 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 38 ns r GS DS DSS D D25 t R = 10 (External) 76 ns d(off) G t 35 ns f Q 70 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 Q 38 nC gd R 0.42C/W thJC R (TO-3P) 0.21 C/W thCS (TO-220) 0.25 C/W Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 62 A S GS I Repetitive 150 A SM TO-220 (IXTP) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 150 ns rr F Q V = 100 V, V = 0 V 2.0 C RM R GS TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2