TM PolarP IXTA10P50P V = - 500V DSS IXTP10P50P I = - 10A Power MOSFET D25 IXTQ10P50P R 1 DS(on) P-Channel Enhancement Mode IXTH10P50P Avalanche Rated TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S G S D D (Tab) S D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C - 500 V DSS J V T = 25 C to 150 C, R = 1M - 500 V DGR J GS V Continuous 20 V GSS G D V Transient 30 V GSM S D (Tab) I T = 25 C - 10 A D25 C I T = 25 C, Pulse Width Limited by T - 30 A G = Gate D = Drain DM C JM S = Source Tab = Drain I T = 25 C - 10 A A C E T = 25 C 1.5 J AS C dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 300 W D C Features T -55 ... +150 C J T 150 C JM International Standard Packages T -55 ... +150 C stg Avalanche Rated TM Rugged PolarP Process T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C Low Package Inductance SOLD Fast Intrinsic Diode M Mounting Torque (TO-3P,TO-220 & TO-247) 1.13/10 Nm/lb.in d Weight TO-263 2.5 g TO-220 3.0 g Advantages TO-3P 5.5 g TO-247 6.0 g Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250A - 500 V DSS GS D High-Side Switches V V = V , I = - 250A - 2.0 - 4.5 V GS(th) DS GS D Push Pull Amplifiers I V = 20V, V = 0V 100 nA DC Choppers GSS GS DS Automatic Test Equipment I V = V , V = 0V - 10 A DSS DS DSS GS Current Regulators T = 125C - 250A J R V = -10V, I = 0.5 I , Note 1 1 DS(on) GS D D25 2015 IXYS CORPORATION, All Rights Reserved DS99911D(2/15)IXTA10P50P IXTQ10P50P IXTP10P50P IXTH10P50P Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 6.5 11 S fs DS D D25 C 2840 pF iss C V = 0V, V = - 25V, f = 1MHz 275 pF oss GS DS C 42 pF rss t 20 ns d(on) Resistive Switching Times t 28 ns r V = -10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 52 ns d(off) R = 3.3 (External) G t 44 ns f Q 50 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 18 nC gd R 0.42 C/W thJC R (TO-3P & TO-247) 0.25 C/W thCS (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 10 A S GS I Repetitive, Pulse Width Limited by T - 40 A SM JM V I = - 5A, V = 0V, Note 1 - 3 V SD F GS t 414 ns rr I = - 5A, -di/dt = -100A/ s F Q 5.90 C RM V = -100V, V = 0V I R GS - 28.6 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537