TM IXTK 120N20P PolarHT V = 200 V DSS IXTQ 120N20P Power MOSFET I = 120 A D25 R 22 m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 200 V DSS J V T = 25 C to 175 C R = 1 M 200 V DGR J GS G V Continuous 20 V GS D (TAB) S V Transient 30 V GSM I T = 25 C 120 A D25 C TO-3P (IXTQ) I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 300 A DM C JM I T = 25C60A AR C E T = 25C60mJ G AR C D (TAB) E T = 25 C 2.0 J S AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS G = Gate D = Drain T 175C, R = 4 J G S = Source TAB = Drain P T = 25 C 714 W D C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg l International standard packages T 1.6 mm (0.062 in.) from case for 10 s 300 C L l Unclamped Inductive Switching (UIS) T Plastic body for 10 s 260 C SOLD rated l Low package inductance M Mounting torque 1.13/10 Nm/lb.in. d - easy to drive and to protect Weight TO-3P 5.5 g TO-264 10 g Symbol Test Conditions Characteristic Values Advantages (T = 25 C, unless otherwise specified) Min. Typ. Max. J l Easy to mount BV V = 0 V, I = 250 A 200 V DSS GS D l Space savings l V V = V , I = 250A 2.5 5.0 V High power density GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 175 C 500 A GS J R V = 10 V, I = 0.5 I 22 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99207E(10/05) 2006 IXYS All rights reserved IXTK 120N20P IXTQ 120N20P TO-264 (IXTK) Outline Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 40 63 S fs DS D D25 C 6000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1300 pF oss GS DS C 265 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = I 35 ns r GS DS DSS D D25 t R = 3.3 (External) 100 ns d(off) G t 31 ns Dim. Millimeter Inches f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 152 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = 10 V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q 75 nC gd b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 R 0.21 C/W thJC D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R TO-3P 0.21 C/W thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R TO-264 0.15 C/W thCS K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Source-Drain Diode Characteristic Values Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 (T = 25 C, unless otherwise specified) J R 3.81 4.32 .150 .170 Symbol Test Conditions Min. Typ. Max. R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 I V = 0 V 120 A S GS TO-3P (IXTQ) Outline I Repetitive 300 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 180 ns rr F Q V = 100 V, V = 0 V 3.0 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2