TM Polar V = 500V IXTV22N50P DSS I = 22A Power MOSFETs IXTV22N50PS D25 R 270m DS(on) N-Channel Enhancement Mode IXTQ22N50P Avalanche Rated t = 400ns rr(typ) IXTH22N50P Fast Intrinsic Diode PLUS220 (IXTV) TO-3P (IXTQ) PLUS220SMD (IXTV S) G G D G D S S S D (TAB) D (TAB) D (TAB) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM D (TAB) I T = 25C22A D25 C I T = 25C, Pulse Width Limited by T 50 A G = Gate D = Drain DM C JM S = Source TAB = Drain I T = 25C22A A C E T = 25C 750 mJ AS C dV/dt I I , V V ,T 150C 10 V/ns S DM DD DSS J Features P T = 25C 350 W D C z T -55 ... +150 C International Standard Packages J z Avalanche Rated T 150 C JM z Fast Intrinsic Diode z T -55 ... +150 C Low Package Inductance stg T Maximum Lead Temperature for Soldering 300 C L Advantages T Plastic Body for 10s 260 C SOLD z M Mounting Torque (TO-247 & TO-3P) 1.13/10 Nm/lb.in. High Power Density d z Easy to Mount F Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb. C z Space Savings Weight PLUS220 types 4.0 g TO-3P 5.5 g Applications TO-247 6.0 g z Switched-Mode and Resonant-Mode Power Supplies Symbol Test Conditions Characteristic Values z DC-DC Converters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Laser Drivers BV V = 0V, I = 250A 500 V z DSS GS D AC and DC Motor Drives z Robotics and Servo Controls V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J R V = 10V, I = 0.5 I , Note 1 270 m DS(on) GS D D25 2009 IXYS CORPORATION, All Rights Reserved DS99351G(07/09)IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 12 20 S fs DS D D25 C 2880 pF iss C V = 0V, V = 25V, f = 1MHz 310 pF oss GS DS C 29 pF rss t 22 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 72 ns d(off) R = 10 (External) G t 21 ns f Q 50 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 16 nC gs GS DS DSS D D25 Q 18 nC gd R 0.35 C/W thJC R (TO-247, PLUS220 & TO-3P) 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 22 A S GS I Repetitive, Pulse Width Limited by T 88 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 400 ns rr I = 22A, -di/dt = 100A/s F V = 100V, V = 0V R GS Note 1. Pulse Test, t 300s Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537